CuI‐based hybrid junction in photovoltaic devices with semitransparent cathode

A hybrid inorganic/organic heterojunction formed by p‐type cuprous iodide CuI and n‐type fullerene C60 was employed in the archetypal photovoltaic devices. The thickness of the p‐CuI layer deposited on a molybdenum oxide (MoOx) anode buffer was optimized to achieve a higher efficiency, while the thi...

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Veröffentlicht in:Physica status solidi. A, Applications and materials science Applications and materials science, 2017-09, Vol.214 (9), p.n/a
Hauptverfasser: Travkin, Vlad V., Yunin, Pavel A., Luk'yanov, Andrey Y., Stuzhin, Pavel A., Pakhomov, Georgy L.
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Sprache:eng
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Zusammenfassung:A hybrid inorganic/organic heterojunction formed by p‐type cuprous iodide CuI and n‐type fullerene C60 was employed in the archetypal photovoltaic devices. The thickness of the p‐CuI layer deposited on a molybdenum oxide (MoOx) anode buffer was optimized to achieve a higher efficiency, while the thickness of the n‐C60 photoabsorber layer was fixed. In an attempt to obtain semitransparent devices, a trilayer MoOx/metal/MoOx cathode with a BCP underlayer was applied (metal = Ag or Mg, BCP = bathocuproine). The maximum photovoltage of such devices on a PET/ITO substrate was equal to 0.75 V for an average transparency of about 35% over the range of 380–1000 nm. Similar devices having a non‐transparent Al cathode in conjunction with an Alq3 underlayer generate photovoltage of 0.82 V (Alq3 = tris‐8‐hydroxy­quinolinato‐aluminum), which shows the important effect of hybrid junctions in multilayer organic‐based devices.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201700186