Effect of La doping on the lattice defects and photoluminescence properties of CuO

Pure and La doped CuO have been successfully prepared by solution combustion synthesis (SCS) and annealed at different temperature. The crystal structure, functional group and surface morphology are analyzed using powder X-ray diffraction, Fourier transform infrared spectra and scanning electron microscopic images. The defects type and defect related photoluminescence properties are analyzed from positron annihilation spectroscopy and photoluminescence spectra respectively. This paper also examines the effect of annealing temperature and dopant concentration on lattice defect. Incorporation of La ion in CuO reduces the crystallite size and induces more number of non-radiative transition centers in CuO. •CuO and La doped CuO were synthesized by solution-combustion method.•Crystal structure, functional group and surface morphology were studied.•Type of defects and defect related photoluminescence properties were found.•Effect of annealing temperature and dopant concentration on lattice defect were examined.