CrN thin films with ultra-low magnetoresistance prepared via solution processing for large-area applications

CrN thin films are versatile in lots of applications. To develop a facile processing method for large-area CrN thin films with low-cost is unquestionable to improve the technical advances in CrN applications. In this work, CrN thin films are prepared by chemical solution deposition processing for large-area applications. The electrical transport properties are investigated, showing semiconductor-like properties. Magnetoresistance at low temperatures under high magnetic fields is observed in the CrN thin films, showing ultra-low magnetoresistance under 14T of −0.14% and −0.10% at 4.2 and 2 K, respectively. [Display omitted] •CrN thin films as versatile materials have been successfully prepared by a facile solution processing.•Annealing temperature effects of the derived CrN thin films are investigated.•Ultra-low magnetoresistance is observed in CrN thin films in high magnetic fields and low temperatures.•The achievement is a tremendous leap to synthesis other novel nitride thin films.