Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (001) substrates
•MOVPE grown Ga(NAs)/(BGa)(AsP) MQWH on (001) Si-substrate.•N concentrations of up to 16.8% in Ga(NAs).•Photoluminescence emission wavelength up to 1300nm at 15K. GaNAs/GaP/BGaAsP-multiple quantum well heterostructures (MQWH) were deposited pseudomorphically strained on exactly oriented (001) Si-sub...
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| Veröffentlicht in: | Journal of crystal growth 2017-06, Vol.467, p.61-64 |
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| container_title | Journal of crystal growth |
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| creator | Ludewig, P. Diederich, M. Jandieri, K. Stolz, W. |
| description | •MOVPE grown Ga(NAs)/(BGa)(AsP) MQWH on (001) Si-substrate.•N concentrations of up to 16.8% in Ga(NAs).•Photoluminescence emission wavelength up to 1300nm at 15K.
GaNAs/GaP/BGaAsP-multiple quantum well heterostructures (MQWH) were deposited pseudomorphically strained on exactly oriented (001) Si-substrate plus thin GaP buffer by metal organic vapor phase epitaxy (MOVPE). The compressive strain of the GaNAs QW material enabled N fractions as high as 16.8%. Structural analyses show that the structures exhibit high crystalline quality for moderate strain values of 0.6% to 2.2%. Room temperature PL was obtained from samples with up to 11% N with an emission wavelength of up to 1130nm. At low temperatures (15K) even layers with 15% N showed photoluminescence from the GaNAs QW expanding the emission wavelength range to 1300nm. |
| doi_str_mv | 10.1016/j.jcrysgro.2017.03.003 |
| format | Article |
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GaNAs/GaP/BGaAsP-multiple quantum well heterostructures (MQWH) were deposited pseudomorphically strained on exactly oriented (001) Si-substrate plus thin GaP buffer by metal organic vapor phase epitaxy (MOVPE). The compressive strain of the GaNAs QW material enabled N fractions as high as 16.8%. Structural analyses show that the structures exhibit high crystalline quality for moderate strain values of 0.6% to 2.2%. Room temperature PL was obtained from samples with up to 11% N with an emission wavelength of up to 1130nm. At low temperatures (15K) even layers with 15% N showed photoluminescence from the GaNAs QW expanding the emission wavelength range to 1300nm.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2017.03.003</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. High resolution X-ray diffraction ; A3. Metalorganic vapor phase epitaxy ; B1. Dilute nitrides ; B2. Semiconducting III-V materials ; Compressive properties ; Crystal structure ; Crystals ; Emission ; Heterostructures ; Integrated circuits ; Metalorganic chemical vapor deposition ; Multi Quantum Wells ; Optoelectronics ; Photoluminescence ; Semiconductors ; Silicon ; Silicon substrates ; Vapor phase epitaxy</subject><ispartof>Journal of crystal growth, 2017-06, Vol.467, p.61-64</ispartof><rights>2017 Elsevier B.V.</rights><rights>Copyright Elsevier BV Jun 1, 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c340t-a62dae317a729c7d803c9b1213db1758aa7ec058e1abad0db41327dc208ba5b13</citedby><cites>FETCH-LOGICAL-c340t-a62dae317a729c7d803c9b1213db1758aa7ec058e1abad0db41327dc208ba5b13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2017.03.003$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Ludewig, P.</creatorcontrib><creatorcontrib>Diederich, M.</creatorcontrib><creatorcontrib>Jandieri, K.</creatorcontrib><creatorcontrib>Stolz, W.</creatorcontrib><title>Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (001) substrates</title><title>Journal of crystal growth</title><description>•MOVPE grown Ga(NAs)/(BGa)(AsP) MQWH on (001) Si-substrate.•N concentrations of up to 16.8% in Ga(NAs).•Photoluminescence emission wavelength up to 1300nm at 15K.
GaNAs/GaP/BGaAsP-multiple quantum well heterostructures (MQWH) were deposited pseudomorphically strained on exactly oriented (001) Si-substrate plus thin GaP buffer by metal organic vapor phase epitaxy (MOVPE). The compressive strain of the GaNAs QW material enabled N fractions as high as 16.8%. Structural analyses show that the structures exhibit high crystalline quality for moderate strain values of 0.6% to 2.2%. Room temperature PL was obtained from samples with up to 11% N with an emission wavelength of up to 1130nm. At low temperatures (15K) even layers with 15% N showed photoluminescence from the GaNAs QW expanding the emission wavelength range to 1300nm.</description><subject>A1. High resolution X-ray diffraction</subject><subject>A3. Metalorganic vapor phase epitaxy</subject><subject>B1. Dilute nitrides</subject><subject>B2. Semiconducting III-V materials</subject><subject>Compressive properties</subject><subject>Crystal structure</subject><subject>Crystals</subject><subject>Emission</subject><subject>Heterostructures</subject><subject>Integrated circuits</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Multi Quantum Wells</subject><subject>Optoelectronics</subject><subject>Photoluminescence</subject><subject>Semiconductors</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>Vapor phase epitaxy</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqFkM1OwzAQhC0EEuXnFZAlLnBIurabOr1REASkqiABZ2vjuK2jNgbboeLtcVU4c9k97Mys5iPkgkHOgI2Hbd5q_x2W3uUcmMxB5ADigAxYKUVWAPBDMkiTZ8BH5TE5CaEFSE4GA4KVd9u4om5BV3a5onOqXRfRdrZb0grn0zCs8GV4W-E0vNBNv46WfvbYxX5Dt2a9piH6Xsfem0BdR18tvUrR1zT0dbpgNOGMHC1wHcz57z4l7w_3b3eP2ey5erqbzjItRhAzHPMGjWASJZ9o2ZQg9KRmnImmZrIoEaXRUJSGYY0NNPWICS4bzaGssaiZOCWX-9wP7z57E6JqXe-79FKxiRC8KDgvk2q8V2nvQvBmoT683aD_VgzUDqdq1R9OtcOpQKiEMxlv9kaTOnxZ41XQ1nTaNNYbHVXj7H8RP9RggN8</recordid><startdate>20170601</startdate><enddate>20170601</enddate><creator>Ludewig, P.</creator><creator>Diederich, M.</creator><creator>Jandieri, K.</creator><creator>Stolz, W.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20170601</creationdate><title>Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (001) substrates</title><author>Ludewig, P. ; Diederich, M. ; Jandieri, K. ; Stolz, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c340t-a62dae317a729c7d803c9b1213db1758aa7ec058e1abad0db41327dc208ba5b13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>A1. High resolution X-ray diffraction</topic><topic>A3. Metalorganic vapor phase epitaxy</topic><topic>B1. Dilute nitrides</topic><topic>B2. Semiconducting III-V materials</topic><topic>Compressive properties</topic><topic>Crystal structure</topic><topic>Crystals</topic><topic>Emission</topic><topic>Heterostructures</topic><topic>Integrated circuits</topic><topic>Metalorganic chemical vapor deposition</topic><topic>Multi Quantum Wells</topic><topic>Optoelectronics</topic><topic>Photoluminescence</topic><topic>Semiconductors</topic><topic>Silicon</topic><topic>Silicon substrates</topic><topic>Vapor phase epitaxy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ludewig, P.</creatorcontrib><creatorcontrib>Diederich, M.</creatorcontrib><creatorcontrib>Jandieri, K.</creatorcontrib><creatorcontrib>Stolz, W.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ludewig, P.</au><au>Diederich, M.</au><au>Jandieri, K.</au><au>Stolz, W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (001) substrates</atitle><jtitle>Journal of crystal growth</jtitle><date>2017-06-01</date><risdate>2017</risdate><volume>467</volume><spage>61</spage><epage>64</epage><pages>61-64</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><abstract>•MOVPE grown Ga(NAs)/(BGa)(AsP) MQWH on (001) Si-substrate.•N concentrations of up to 16.8% in Ga(NAs).•Photoluminescence emission wavelength up to 1300nm at 15K.
GaNAs/GaP/BGaAsP-multiple quantum well heterostructures (MQWH) were deposited pseudomorphically strained on exactly oriented (001) Si-substrate plus thin GaP buffer by metal organic vapor phase epitaxy (MOVPE). The compressive strain of the GaNAs QW material enabled N fractions as high as 16.8%. Structural analyses show that the structures exhibit high crystalline quality for moderate strain values of 0.6% to 2.2%. Room temperature PL was obtained from samples with up to 11% N with an emission wavelength of up to 1130nm. At low temperatures (15K) even layers with 15% N showed photoluminescence from the GaNAs QW expanding the emission wavelength range to 1300nm.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2017.03.003</doi><tpages>4</tpages></addata></record> |
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| subjects | A1. High resolution X-ray diffraction A3. Metalorganic vapor phase epitaxy B1. Dilute nitrides B2. Semiconducting III-V materials Compressive properties Crystal structure Crystals Emission Heterostructures Integrated circuits Metalorganic chemical vapor deposition Multi Quantum Wells Optoelectronics Photoluminescence Semiconductors Silicon Silicon substrates Vapor phase epitaxy |
| title | Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (001) substrates |
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