Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (001) substrates

•MOVPE grown Ga(NAs)/(BGa)(AsP) MQWH on (001) Si-substrate.•N concentrations of up to 16.8% in Ga(NAs).•Photoluminescence emission wavelength up to 1300nm at 15K. GaNAs/GaP/BGaAsP-multiple quantum well heterostructures (MQWH) were deposited pseudomorphically strained on exactly oriented (001) Si-substrate plus thin GaP buffer by metal organic vapor phase epitaxy (MOVPE). The compressive strain of the GaNAs QW material enabled N fractions as high as 16.8%. Structural analyses show that the structures exhibit high crystalline quality for moderate strain values of 0.6% to 2.2%. Room temperature PL was obtained from samples with up to 11% N with an emission wavelength of up to 1130nm. At low temperatures (15K) even layers with 15% N showed photoluminescence from the GaNAs QW expanding the emission wavelength range to 1300nm.