MOVPE deposition of Sb2Te3 and other phases of Sb-Te system on sapphire substrate

•Sb2Te3 films and other phases of the Sb-Te system were deposited using MOCVD method.•X-ray diffractometry, SEM microscopy, Raman and EDX spectroscopy were used to study as-grown films.•The conditions for formation of different phases of the homologous series nSb2·mSb2Te are determined.•Transport properties of continuous Sb-Te films were evaluated using Van der Pauw technique at 300K. The films of Sb-Te system have been deposited by MOVPE on (0001) Al2O3 substrates with thin ZnTe buffer layers at different temperatures and Te/Sb ratios in the vapor phase. X-ray diffractometry, SEM microscopy, Raman and EDX spectroscopy were used to study as-grown films. The surface morphology and stoichiometry of Sb-Te films strongly depend on Te/Sb ratio in vapor phase. We have deposited the phases of homologous series nSb2·mSb2Te3 with following stoichiometries: Sb2Te3, Sb4Te5, Sb8Te9, Sb10Te9, Sb4Te3, Sb2Te, Sb8Te3, Sb10Te3, Sb16Te3, Sb18Te3 and Sb. Transport properties of Sb2Te3, Sb4Te5, Sb8Te9, Sb4Te3, Sb2Te were evaluated using Van der Pauw technique at 300K.