Diamond MIP structure Schottky diode with different drift layer thickness

Vertical structure metal-insulator-p-type diamond Schottky barrier diodes (SBDs) with different thickness drift layers have been fabricated. Un-doped single crystal diamond layers were grown on HPHT boron doped diamond substrates as the drift layers. Then, Mo/Ni/Au was deposited on the drift layer as Schottky electrode and Ti/Au was deposited on the back side of diamond substrate as ohmic electrode. The ideality factor and Schottky barrier height of diode were evaluated from current-voltage curve. The minimum reverse current density of SBD could be as low as 100pA/cm2 at 10V and the maximum forward current density is 7570A/cm2 at −10V. The rectification ratio and the breakdown electric field reached 12 orders and 4.2MV/cm, respectively. [Display omitted] •Vertical structure MIP diamond Schottky barrier diodes with different thickness drift layers have been fabricated.•The current density will decrease with the increasing of the epitaxial layer's thickness.•The reverse bias breakdown electric field decreases with the increasing of the epitaxial layer's thickness.•The Defects in diamond film should be controlled to improve current density and the reverse electric field.