Thin large area vertical Schottky barrier diamond diodes with low on-resistance made by ion-beam assisted lift-off technique
We designed and made 15μm large area vertical Schottky barrier diamond diodes with resulting substrate thickness of about 1μm. The ion-beam assisted lift-off technique was successfully used to separate 5×5mm2 active two-layered structure from ballast HPHT diamond substrate. The fabricated diodes had...
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| Veröffentlicht in: | Diamond and related materials 2017-05, Vol.75, p.78-84 |
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| container_title | Diamond and related materials |
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| creator | Bormashov, V.S. Terentiev, S.A. Buga, S.G. Tarelkin, S.A. Volkov, A.P. Teteruk, D.V. Kornilov, N.V. Kuznetsov, M.S. Blank, V.D. |
| description | We designed and made 15μm large area vertical Schottky barrier diamond diodes with resulting substrate thickness of about 1μm. The ion-beam assisted lift-off technique was successfully used to separate 5×5mm2 active two-layered structure from ballast HPHT diamond substrate. The fabricated diodes had |
| doi_str_mv | 10.1016/j.diamond.2017.02.006 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1932132327</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0925963516306422</els_id><sourcerecordid>1932132327</sourcerecordid><originalsourceid>FETCH-LOGICAL-c384t-ec1e13e52371658f9cbca2f305d2517f1a1cad2da3c68ddf27dbecc4345256b03</originalsourceid><addsrcrecordid>eNqFkEtLAzEUhYMoWKs_QQi4njGPZqazEim-oODCug6Z5MZmnE5qkrYU_PGmtHtX53If53A_hG4pKSmh1X1XGqdWfjAlI7QuCSsJqc7QiE7rpsglO0cj0jBRNBUXl-gqxo4QypoJHaHfxdINuFfhC7AKoPAWQnJa9fhDL31K33vcqhAcBHwKyeoNRLxzaYl7v8N-KAJEF5MaNOCVMoDbPXa53YJaYRUPMzC4dzYV3lqcQC8H97OBa3RhVR_h5qRj9Pn8tJi9FvP3l7fZ47zQfDpJBWgKlINgvKaVmNpGt1oxy4kwTNDaUkW1MsworqupMZbVpgWtJ3wimKhawsfo7ui7Dj7HxiQ7vwlDjpS04Yxyxlmdt8RxSwcfYwAr18GtVNhLSuQBtOzkiYE8gJaEyUw33z0c7yC_sM2kZNQOMgvjAugkjXf_OPwBBWGLtQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1932132327</pqid></control><display><type>article</type><title>Thin large area vertical Schottky barrier diamond diodes with low on-resistance made by ion-beam assisted lift-off technique</title><source>Elsevier ScienceDirect Journals</source><creator>Bormashov, V.S. ; Terentiev, S.A. ; Buga, S.G. ; Tarelkin, S.A. ; Volkov, A.P. ; Teteruk, D.V. ; Kornilov, N.V. ; Kuznetsov, M.S. ; Blank, V.D.</creator><creatorcontrib>Bormashov, V.S. ; Terentiev, S.A. ; Buga, S.G. ; Tarelkin, S.A. ; Volkov, A.P. ; Teteruk, D.V. ; Kornilov, N.V. ; Kuznetsov, M.S. ; Blank, V.D.</creatorcontrib><description>We designed and made 15μm large area vertical Schottky barrier diamond diodes with resulting substrate thickness of about 1μm. The ion-beam assisted lift-off technique was successfully used to separate 5×5mm2 active two-layered structure from ballast HPHT diamond substrate. The fabricated diodes had <6mΩ∗cm2 (0.03Ω) on-resistance at room temperature and 3mΩ∗cm2 (0.015Ω) at 200°C fixed temperature of the diode case. A removal of large ballast substrate resistance results in a significant drop of on-state voltage, power losses and, therefore, increasing of diode efficiency. An additional technology step of sacrificial layer formation by ion implantation did not cause a considerable degradation of diode reverse characteristics. As a result, the room-temperature Baliga's figure of merit of the fabricated thin diodes is more than ten times higher comparing to earlier made thick diodes with a drift layer of the same thickness and boron content. 20A maximum forward DC current and <2V voltage drop were measured at fixed case temperatures in the range from 0°C to 200°C using an active heat sink.
[Display omitted]
•We fabricated 15μm thick large area Schottky barrier diamond diodes by ion-beam assisted lift-off technique.•Packaged diodes provided the lowest reported on-resistance of 0.03Ω at RT and 0.015Ω at 200°C.•Reducing losses due to separation of thin structure from substrate results in increase of forward current.•20A forward DC current at <2V voltage drop were measured in the range from 0°C to 200°C.</description><identifier>ISSN: 0925-9635</identifier><identifier>EISSN: 1879-0062</identifier><identifier>DOI: 10.1016/j.diamond.2017.02.006</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Ballast ; Boron ; Diamonds ; Diodes ; Direct current ; Electric potential ; Electric resistance ; Electrical properties ; Figure of merit ; Forward current ; Ion beam implantation ; Ion beams ; Ion implantation ; Lift-off procedure ; Liftoff ; Power efficiency ; Schottky barrier diode ; Schottky diodes ; Synthetic diamond ; Thickness ; Voltage drop</subject><ispartof>Diamond and related materials, 2017-05, Vol.75, p.78-84</ispartof><rights>2017 Elsevier B.V.</rights><rights>Copyright Elsevier BV May 2017</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c384t-ec1e13e52371658f9cbca2f305d2517f1a1cad2da3c68ddf27dbecc4345256b03</citedby><cites>FETCH-LOGICAL-c384t-ec1e13e52371658f9cbca2f305d2517f1a1cad2da3c68ddf27dbecc4345256b03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0925963516306422$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Bormashov, V.S.</creatorcontrib><creatorcontrib>Terentiev, S.A.</creatorcontrib><creatorcontrib>Buga, S.G.</creatorcontrib><creatorcontrib>Tarelkin, S.A.</creatorcontrib><creatorcontrib>Volkov, A.P.</creatorcontrib><creatorcontrib>Teteruk, D.V.</creatorcontrib><creatorcontrib>Kornilov, N.V.</creatorcontrib><creatorcontrib>Kuznetsov, M.S.</creatorcontrib><creatorcontrib>Blank, V.D.</creatorcontrib><title>Thin large area vertical Schottky barrier diamond diodes with low on-resistance made by ion-beam assisted lift-off technique</title><title>Diamond and related materials</title><description>We designed and made 15μm large area vertical Schottky barrier diamond diodes with resulting substrate thickness of about 1μm. The ion-beam assisted lift-off technique was successfully used to separate 5×5mm2 active two-layered structure from ballast HPHT diamond substrate. The fabricated diodes had <6mΩ∗cm2 (0.03Ω) on-resistance at room temperature and 3mΩ∗cm2 (0.015Ω) at 200°C fixed temperature of the diode case. A removal of large ballast substrate resistance results in a significant drop of on-state voltage, power losses and, therefore, increasing of diode efficiency. An additional technology step of sacrificial layer formation by ion implantation did not cause a considerable degradation of diode reverse characteristics. As a result, the room-temperature Baliga's figure of merit of the fabricated thin diodes is more than ten times higher comparing to earlier made thick diodes with a drift layer of the same thickness and boron content. 20A maximum forward DC current and <2V voltage drop were measured at fixed case temperatures in the range from 0°C to 200°C using an active heat sink.
[Display omitted]
•We fabricated 15μm thick large area Schottky barrier diamond diodes by ion-beam assisted lift-off technique.•Packaged diodes provided the lowest reported on-resistance of 0.03Ω at RT and 0.015Ω at 200°C.•Reducing losses due to separation of thin structure from substrate results in increase of forward current.•20A forward DC current at <2V voltage drop were measured in the range from 0°C to 200°C.</description><subject>Ballast</subject><subject>Boron</subject><subject>Diamonds</subject><subject>Diodes</subject><subject>Direct current</subject><subject>Electric potential</subject><subject>Electric resistance</subject><subject>Electrical properties</subject><subject>Figure of merit</subject><subject>Forward current</subject><subject>Ion beam implantation</subject><subject>Ion beams</subject><subject>Ion implantation</subject><subject>Lift-off procedure</subject><subject>Liftoff</subject><subject>Power efficiency</subject><subject>Schottky barrier diode</subject><subject>Schottky diodes</subject><subject>Synthetic diamond</subject><subject>Thickness</subject><subject>Voltage drop</subject><issn>0925-9635</issn><issn>1879-0062</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLAzEUhYMoWKs_QQi4njGPZqazEim-oODCug6Z5MZmnE5qkrYU_PGmtHtX53If53A_hG4pKSmh1X1XGqdWfjAlI7QuCSsJqc7QiE7rpsglO0cj0jBRNBUXl-gqxo4QypoJHaHfxdINuFfhC7AKoPAWQnJa9fhDL31K33vcqhAcBHwKyeoNRLxzaYl7v8N-KAJEF5MaNOCVMoDbPXa53YJaYRUPMzC4dzYV3lqcQC8H97OBa3RhVR_h5qRj9Pn8tJi9FvP3l7fZ47zQfDpJBWgKlINgvKaVmNpGt1oxy4kwTNDaUkW1MsworqupMZbVpgWtJ3wimKhawsfo7ui7Dj7HxiQ7vwlDjpS04Yxyxlmdt8RxSwcfYwAr18GtVNhLSuQBtOzkiYE8gJaEyUw33z0c7yC_sM2kZNQOMgvjAugkjXf_OPwBBWGLtQ</recordid><startdate>201705</startdate><enddate>201705</enddate><creator>Bormashov, V.S.</creator><creator>Terentiev, S.A.</creator><creator>Buga, S.G.</creator><creator>Tarelkin, S.A.</creator><creator>Volkov, A.P.</creator><creator>Teteruk, D.V.</creator><creator>Kornilov, N.V.</creator><creator>Kuznetsov, M.S.</creator><creator>Blank, V.D.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>201705</creationdate><title>Thin large area vertical Schottky barrier diamond diodes with low on-resistance made by ion-beam assisted lift-off technique</title><author>Bormashov, V.S. ; Terentiev, S.A. ; Buga, S.G. ; Tarelkin, S.A. ; Volkov, A.P. ; Teteruk, D.V. ; Kornilov, N.V. ; Kuznetsov, M.S. ; Blank, V.D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c384t-ec1e13e52371658f9cbca2f305d2517f1a1cad2da3c68ddf27dbecc4345256b03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Ballast</topic><topic>Boron</topic><topic>Diamonds</topic><topic>Diodes</topic><topic>Direct current</topic><topic>Electric potential</topic><topic>Electric resistance</topic><topic>Electrical properties</topic><topic>Figure of merit</topic><topic>Forward current</topic><topic>Ion beam implantation</topic><topic>Ion beams</topic><topic>Ion implantation</topic><topic>Lift-off procedure</topic><topic>Liftoff</topic><topic>Power efficiency</topic><topic>Schottky barrier diode</topic><topic>Schottky diodes</topic><topic>Synthetic diamond</topic><topic>Thickness</topic><topic>Voltage drop</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bormashov, V.S.</creatorcontrib><creatorcontrib>Terentiev, S.A.</creatorcontrib><creatorcontrib>Buga, S.G.</creatorcontrib><creatorcontrib>Tarelkin, S.A.</creatorcontrib><creatorcontrib>Volkov, A.P.</creatorcontrib><creatorcontrib>Teteruk, D.V.</creatorcontrib><creatorcontrib>Kornilov, N.V.</creatorcontrib><creatorcontrib>Kuznetsov, M.S.</creatorcontrib><creatorcontrib>Blank, V.D.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Diamond and related materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bormashov, V.S.</au><au>Terentiev, S.A.</au><au>Buga, S.G.</au><au>Tarelkin, S.A.</au><au>Volkov, A.P.</au><au>Teteruk, D.V.</au><au>Kornilov, N.V.</au><au>Kuznetsov, M.S.</au><au>Blank, V.D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thin large area vertical Schottky barrier diamond diodes with low on-resistance made by ion-beam assisted lift-off technique</atitle><jtitle>Diamond and related materials</jtitle><date>2017-05</date><risdate>2017</risdate><volume>75</volume><spage>78</spage><epage>84</epage><pages>78-84</pages><issn>0925-9635</issn><eissn>1879-0062</eissn><abstract>We designed and made 15μm large area vertical Schottky barrier diamond diodes with resulting substrate thickness of about 1μm. The ion-beam assisted lift-off technique was successfully used to separate 5×5mm2 active two-layered structure from ballast HPHT diamond substrate. The fabricated diodes had <6mΩ∗cm2 (0.03Ω) on-resistance at room temperature and 3mΩ∗cm2 (0.015Ω) at 200°C fixed temperature of the diode case. A removal of large ballast substrate resistance results in a significant drop of on-state voltage, power losses and, therefore, increasing of diode efficiency. An additional technology step of sacrificial layer formation by ion implantation did not cause a considerable degradation of diode reverse characteristics. As a result, the room-temperature Baliga's figure of merit of the fabricated thin diodes is more than ten times higher comparing to earlier made thick diodes with a drift layer of the same thickness and boron content. 20A maximum forward DC current and <2V voltage drop were measured at fixed case temperatures in the range from 0°C to 200°C using an active heat sink.
[Display omitted]
•We fabricated 15μm thick large area Schottky barrier diamond diodes by ion-beam assisted lift-off technique.•Packaged diodes provided the lowest reported on-resistance of 0.03Ω at RT and 0.015Ω at 200°C.•Reducing losses due to separation of thin structure from substrate results in increase of forward current.•20A forward DC current at <2V voltage drop were measured in the range from 0°C to 200°C.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.diamond.2017.02.006</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Ballast Boron Diamonds Diodes Direct current Electric potential Electric resistance Electrical properties Figure of merit Forward current Ion beam implantation Ion beams Ion implantation Lift-off procedure Liftoff Power efficiency Schottky barrier diode Schottky diodes Synthetic diamond Thickness Voltage drop |
| title | Thin large area vertical Schottky barrier diamond diodes with low on-resistance made by ion-beam assisted lift-off technique |
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