Thin large area vertical Schottky barrier diamond diodes with low on-resistance made by ion-beam assisted lift-off technique

Thin large area vertical Schottky barrier diamond diodes with low on-resistance made by ion-beam assisted lift-off technique

We designed and made 15μm large area vertical Schottky barrier diamond diodes with resulting substrate thickness of about 1μm. The ion-beam assisted lift-off technique was successfully used to separate 5×5mm2 active two-layered structure from ballast HPHT diamond substrate. The fabricated diodes had...

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Veröffentlicht in:Diamond and related materials 2017-05, Vol.75, p.78-84
Hauptverfasser: Bormashov, V.S., Terentiev, S.A., Buga, S.G., Tarelkin, S.A., Volkov, A.P., Teteruk, D.V., Kornilov, N.V., Kuznetsov, M.S., Blank, V.D.
Format: Artikel
Sprache:eng
Schlagworte:
Ballast
Boron
Diamonds
Diodes
Direct current
Electric potential
Electric resistance
Electrical properties
Figure of merit
Forward current
Ion beam implantation
Ion beams
Ion implantation
Lift-off procedure
Liftoff
Power efficiency
Schottky barrier diode
Schottky diodes
Synthetic diamond
Thickness
Voltage drop
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Zusammenfassung:We designed and made 15μm large area vertical Schottky barrier diamond diodes with resulting substrate thickness of about 1μm. The ion-beam assisted lift-off technique was successfully used to separate 5×5mm2 active two-layered structure from ballast HPHT diamond substrate. The fabricated diodes had
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2017.02.006