Diamond Schottky-pn diode using lightly nitrogen-doped layer
We successfully fabricated diamond Schottky-pn diodes (SPNDs) using a lightly nitrogen-doped (N-doped) layer. The diamond SPNDs showed a high forward current density of over 20,000A/cm2 at 7V, a high rectification ratio of over 1013, and a high breakdown electric field of 3.3MV/cm at room temperatur...
Gespeichert in:
Veröffentlicht in: | Diamond and related materials 2017-05, Vol.75, p.152-154 |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | We successfully fabricated diamond Schottky-pn diodes (SPNDs) using a lightly nitrogen-doped (N-doped) layer. The diamond SPNDs showed a high forward current density of over 20,000A/cm2 at 7V, a high rectification ratio of over 1013, and a high breakdown electric field of 3.3MV/cm at room temperature. These properties mean that the N-doped layer acted as an n-type semiconductor. The N-doped n-type layer is effective in the SPNDs as same as a phosphorus-doped n-type layer.
[Display omitted]
•We successfully fabricated diamond Schottky-pn diodes (SPNDs) using a lightly nitrogen-doped (N-doped) layer.•The diamond SPNDs showed a high forward current density of over 20,000A/cm2 at 7V and a high rectification ratio of over 1013.•The breakdown electric field reached 3.3MV/cm. |
---|---|
ISSN: | 0925-9635 1879-0062 |
DOI: | 10.1016/j.diamond.2017.03.018 |