Method for determining the depleted zone thickness in silicon charged particle detectors

Method for determining the depleted zone thickness in silicon charged particle detectors

A method for determining the thickness of silicon charge particle detectors has been developed. The method is based on measurements of spectra from a standard 137 Cs γ source, whose shape changes with detector thickness. The method can be used in the thickness range ∼50–6000 μm with an accuracy from...

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Veröffentlicht in:Bulletin of the Russian Academy of Sciences. Physics 2009-04, Vol.73 (4), p.502-505
Hauptverfasser: Artemov, S. V., Radyuk, G. A., Karakhodzhaev, A. A., Abdullaeva, Ya. S., Yakushev, V. P.
Format: Artikel
Sprache:eng
Schlagworte:
Atomic Power Engineering (LVIII International Conference on
Change detection
Charged particles
Hadrons
Heavy Ions
Medical Physics
Nuclear Physics
Physics
Physics and Astronomy
Proceedings of the International Conference “Nucleus-2008” on the Fundamental Problems of Nuclear Physics and Development of Nuclear Physical Methods for Nanotechnologies
Radiation counters
Silicon
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Zusammenfassung:A method for determining the thickness of silicon charge particle detectors has been developed. The method is based on measurements of spectra from a standard 137 Cs γ source, whose shape changes with detector thickness. The method can be used in the thickness range ∼50–6000 μm with an accuracy from 20 to 10%, respectively. No complex equipment or laborious calculations are needed.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873809040157