Modeling of the effect of low intensity ionizing radiation on MOS elements of VLSI circuits

Modeling of the effect of low intensity ionizing radiation on MOS elements of VLSI circuits

A method for predicting the tolerance of MOS VLSI circuits to low intensity cosmic rays is reported. The method is based on the analysis of the test MOS structure response to high-dose-rate radiation and on the solution of the system of equations describing the radiation-charge accumulation in the g...

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Veröffentlicht in:Bulletin of the Russian Academy of Sciences. Physics 2009-02, Vol.73 (2), p.252-255
Hauptverfasser: Levin, M. N., Bondarenko, E. V., Tatarintsev, A. V., Gitlin, V. R., Makarenko, V. A.
Format: Artikel
Sprache:eng
Schlagworte:
Atomic Power Engineering
Cosmic rays
Hadrons
Heavy Ions
Integrated circuits
Ionizing radiation
Nuclear Physics
Nuclear Technologies (LVII International Conference on Nuclear Spectroscopy and Atomic Nuclear Structure)
Physics
Physics and Astronomy
Proceedings of the International Conference “Nucleus-2007” on the Fundamental Problems of Nuclear Physics
Radiation dosage
Silicon dioxide
Thermal emission
Very large scale integration
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Zusammenfassung:A method for predicting the tolerance of MOS VLSI circuits to low intensity cosmic rays is reported. The method is based on the analysis of the test MOS structure response to high-dose-rate radiation and on the solution of the system of equations describing the radiation-charge accumulation in the gate oxide of the poly-Si-SiO 2 (P)-Si structure and its relaxation by tunneling and thermal emission.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873809020282