Effects of light localization in photoluminescence and Raman scattering in silicon nanostructures

The effect of light localization in photoluminescence (PL) and Raman scattering (RS) in silicon nanowires with diameter of 100 nm was investigated. The optical excitation was done by CW radiation of a YAG:Nd laser at 1.064 μm. The PL an RS intensities were found to increase strongly for the samples...

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Veröffentlicht in:	Bulletin of the Russian Academy of Sciences. Physics 2010-12, Vol.74 (12), p.1712-1714
Hauptverfasser:	Gonchar, K. A., Golovan’, L. A., Timoshenko, V. Yu, Sivakov, V. A., Christiansen, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Hadrons Heavy Ions Localization Nanostructure Nanowires Nuclear Physics Photoluminescence Photons Physics Physics and Astronomy Proceedings of the XII All-Russia Seminar “The Wave Phenomena in Inhomogeneous Media” Raman spectra Scattering Silicon substrates YAG lasers
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Zusammenfassung:	The effect of light localization in photoluminescence (PL) and Raman scattering (RS) in silicon nanowires with diameter of 100 nm was investigated. The optical excitation was done by CW radiation of a YAG:Nd laser at 1.064 μm. The PL an RS intensities were found to increase strongly for the samples with Si nanowires in comparison with corresponding values of c-Si substrate. The effect is explained by an increase of the lifetime of photons in silicon nanowire structures.
ISSN:	1062-8738 1934-9432
DOI:	10.3103/S1062873810120208