Image contrast in the backscattered electron mode in scanning electron microscopy and microtomography

The problem of image contrast production in the backscattered electron (BSE) mode in a scanning electron microscope (SEM) in bulk and film structures is discussed. The considerable influence of the parameters of a semiconductor detector on the image contrast is shown. Calculations for contrast in dependence on the composition of target sections, the energy of primary electrons, and the signal detection technique are presented.