Electric and photoelectric properties of n-AgInSe2/p-Si heterojunction diode fabricated by successive layer deposition

Thin films of AgInSe 2 ternary compound were grown by a successive process in which the production of AIS-Ag–AIS-Ag–AIS-Ag layers was deposited by e-beam and thermal evaporation on p -type silicon substrates. The formation of a stoichiometric AgInSe 2 thin film with 75.2% crystallinity was achieved and the film had homogenous and smooth surfaces. n -AgInSe 2 / p -Si structure has exhibited good rectifying behavior with rectification ratio of 3.99 × 10 3 . The ideality factor and saturation current were found to be 1.74 and 2.71 × 10 −7 A, respectively. The n -AgInSe 2 / p -Si heterojunction diode exhibited non-ideal reverse-bias capacitance–voltage ( C −2 – V ) characteristic due to fully depletion of n -AgInSe 2 side. The basic photovoltaic parameters of the diode such as open-circuit voltage ( V oc ), short-circuit current ( I sc ), and fill factor (FF) were obtained as 0.49 V, 4.03 mA, and 27.65%, respectively.