Cu2(Sn1−xGex)S3 solar cells prepared via co‐evaporation and annealing in germanium sulfide and sulfur vapor
Cu2Sn1−xGexS3 (CTGS) thin films were prepared by co‐evaporation of Cu, Sn, and S to form Cu2SnS3 (CTS) precursors, which were then annealed at 570 °C in an atmosphere composed of N2, GeS2, and S vapor. The films were then used to fabricate photovoltaic cells with the structure glass/Mo/CTGS/CdS/ZnO:...
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| Veröffentlicht in: | Physica status solidi. C 2017-06, Vol.14 (6), p.n/a |
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| creator | Sasagawa, Shohei Yago, Aimi Kanai, Ayaka Araki, Hideaki |
| description | Cu2Sn1−xGexS3 (CTGS) thin films were prepared by co‐evaporation of Cu, Sn, and S to form Cu2SnS3 (CTS) precursors, which were then annealed at 570 °C in an atmosphere composed of N2, GeS2, and S vapor. The films were then used to fabricate photovoltaic cells with the structure glass/Mo/CTGS/CdS/ZnO:Al/Al. A cell with a film composition of Cu2(Sn0.86Ge0.14)S3 fabricated from slightly Cu‐rich CTS (Cu/Sn = 2.07) exhibited a conversion efficiency of 3.4% and an open‐circuit voltage of 0.29 V. The band gap based on the external quantum efficiency was estimated to be approximately 1.0 eV. The open‐circuit voltage was found to be larger than that for a CTS thin film solar cell and increased with band gap energy. |
| doi_str_mv | 10.1002/pssc.201600193 |
| format | Article |
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The films were then used to fabricate photovoltaic cells with the structure glass/Mo/CTGS/CdS/ZnO:Al/Al. A cell with a film composition of Cu2(Sn0.86Ge0.14)S3 fabricated from slightly Cu‐rich CTS (Cu/Sn = 2.07) exhibited a conversion efficiency of 3.4% and an open‐circuit voltage of 0.29 V. The band gap based on the external quantum efficiency was estimated to be approximately 1.0 eV. The open‐circuit voltage was found to be larger than that for a CTS thin film solar cell and increased with band gap energy.</description><identifier>ISSN: 1862-6351</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.201600193</identifier><language>eng</language><publisher>Berlin: WILEY‐VCH Verlag Berlin GmbH</publisher><subject>Annealing ; Band gap ; Cadmium sulfide ; Copper ; co‐evaporation ; Cu2(Sn1−xGex)S3 (CTGS) ; Electric potential ; Energy gap ; Evaporation ; Germanium sulfide ; Molybdenum ; Photovoltaic cells ; Quantum efficiency ; Solar cells ; Sulfur ; thin film solar cell ; Thin films ; Tin ; Zinc oxide</subject><ispartof>Physica status solidi. C, 2017-06, Vol.14 (6), p.n/a</ispartof><rights>2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssc.201600193$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssc.201600193$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27903,27904,45553,45554</link.rule.ids></links><search><creatorcontrib>Sasagawa, Shohei</creatorcontrib><creatorcontrib>Yago, Aimi</creatorcontrib><creatorcontrib>Kanai, Ayaka</creatorcontrib><creatorcontrib>Araki, Hideaki</creatorcontrib><title>Cu2(Sn1−xGex)S3 solar cells prepared via co‐evaporation and annealing in germanium sulfide and sulfur vapor</title><title>Physica status solidi. C</title><description>Cu2Sn1−xGexS3 (CTGS) thin films were prepared by co‐evaporation of Cu, Sn, and S to form Cu2SnS3 (CTS) precursors, which were then annealed at 570 °C in an atmosphere composed of N2, GeS2, and S vapor. The films were then used to fabricate photovoltaic cells with the structure glass/Mo/CTGS/CdS/ZnO:Al/Al. A cell with a film composition of Cu2(Sn0.86Ge0.14)S3 fabricated from slightly Cu‐rich CTS (Cu/Sn = 2.07) exhibited a conversion efficiency of 3.4% and an open‐circuit voltage of 0.29 V. The band gap based on the external quantum efficiency was estimated to be approximately 1.0 eV. The open‐circuit voltage was found to be larger than that for a CTS thin film solar cell and increased with band gap energy.</description><subject>Annealing</subject><subject>Band gap</subject><subject>Cadmium sulfide</subject><subject>Copper</subject><subject>co‐evaporation</subject><subject>Cu2(Sn1−xGex)S3 (CTGS)</subject><subject>Electric potential</subject><subject>Energy gap</subject><subject>Evaporation</subject><subject>Germanium sulfide</subject><subject>Molybdenum</subject><subject>Photovoltaic cells</subject><subject>Quantum efficiency</subject><subject>Solar cells</subject><subject>Sulfur</subject><subject>thin film solar cell</subject><subject>Thin films</subject><subject>Tin</subject><subject>Zinc oxide</subject><issn>1862-6351</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNo9kE9LAzEQxRdRsFavngNe9LA1_7s5yqJVKCisnkM2m5SUbXZNurW9efQofsR-EreteBjmDfxmHvOS5BLBEYIQ37Yx6hGGiEOIBDlKBogjmCJO8XGvM45TThg6Tc5inENIWE8Okibv8HXh0fbrZz0x65uCgNjUKgBt6jqCNphWBVOBlVNAN9vPb7NSbRPU0jUeKF_15Y2qnZ8B58HMhIXyrluA2NXWVWaP7HQXwH7xPDmxqo7m4q8Pk7eH-9f8MZ0-T57yu2k6x0KQVHNOqFUaVxozJHT_irZZxhEVlAlmzZgraxhipRVjyElpNC5hRSmkxJZlSYbJ1eFuG5r3zsSlnDdd8L2lRAKLjDE6Jj0lDtSHq81GtsEtVNhIBOUuUblLVP4nKl-KIv-fyC8klW8q</recordid><startdate>201706</startdate><enddate>201706</enddate><creator>Sasagawa, Shohei</creator><creator>Yago, Aimi</creator><creator>Kanai, Ayaka</creator><creator>Araki, Hideaki</creator><general>WILEY‐VCH Verlag Berlin GmbH</general><general>Wiley Subscription Services, Inc</general><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>201706</creationdate><title>Cu2(Sn1−xGex)S3 solar cells prepared via co‐evaporation and annealing in germanium sulfide and sulfur vapor</title><author>Sasagawa, Shohei ; Yago, Aimi ; Kanai, Ayaka ; Araki, Hideaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-j2993-c6634fac2dc2519c161cf8861494595fe76afe515bf97063bec2b0d44043fbbb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Annealing</topic><topic>Band gap</topic><topic>Cadmium sulfide</topic><topic>Copper</topic><topic>co‐evaporation</topic><topic>Cu2(Sn1−xGex)S3 (CTGS)</topic><topic>Electric potential</topic><topic>Energy gap</topic><topic>Evaporation</topic><topic>Germanium sulfide</topic><topic>Molybdenum</topic><topic>Photovoltaic cells</topic><topic>Quantum efficiency</topic><topic>Solar cells</topic><topic>Sulfur</topic><topic>thin film solar cell</topic><topic>Thin films</topic><topic>Tin</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sasagawa, Shohei</creatorcontrib><creatorcontrib>Yago, Aimi</creatorcontrib><creatorcontrib>Kanai, Ayaka</creatorcontrib><creatorcontrib>Araki, Hideaki</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sasagawa, Shohei</au><au>Yago, Aimi</au><au>Kanai, Ayaka</au><au>Araki, Hideaki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cu2(Sn1−xGex)S3 solar cells prepared via co‐evaporation and annealing in germanium sulfide and sulfur vapor</atitle><jtitle>Physica status solidi. C</jtitle><date>2017-06</date><risdate>2017</risdate><volume>14</volume><issue>6</issue><epage>n/a</epage><issn>1862-6351</issn><eissn>1610-1642</eissn><abstract>Cu2Sn1−xGexS3 (CTGS) thin films were prepared by co‐evaporation of Cu, Sn, and S to form Cu2SnS3 (CTS) precursors, which were then annealed at 570 °C in an atmosphere composed of N2, GeS2, and S vapor. The films were then used to fabricate photovoltaic cells with the structure glass/Mo/CTGS/CdS/ZnO:Al/Al. A cell with a film composition of Cu2(Sn0.86Ge0.14)S3 fabricated from slightly Cu‐rich CTS (Cu/Sn = 2.07) exhibited a conversion efficiency of 3.4% and an open‐circuit voltage of 0.29 V. The band gap based on the external quantum efficiency was estimated to be approximately 1.0 eV. The open‐circuit voltage was found to be larger than that for a CTS thin film solar cell and increased with band gap energy.</abstract><cop>Berlin</cop><pub>WILEY‐VCH Verlag Berlin GmbH</pub><doi>10.1002/pssc.201600193</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 1862-6351 |
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| language | eng |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Annealing Band gap Cadmium sulfide Copper co‐evaporation Cu2(Sn1−xGex)S3 (CTGS) Electric potential Energy gap Evaporation Germanium sulfide Molybdenum Photovoltaic cells Quantum efficiency Solar cells Sulfur thin film solar cell Thin films Tin Zinc oxide |
| title | Cu2(Sn1−xGex)S3 solar cells prepared via co‐evaporation and annealing in germanium sulfide and sulfur vapor |
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