Cu2(Sn1−xGex)S3 solar cells prepared via co‐evaporation and annealing in germanium sulfide and sulfur vapor

Cu2(Sn1−xGex)S3 solar cells prepared via co‐evaporation and annealing in germanium sulfide and sulfur vapor

Cu2Sn1−xGexS3 (CTGS) thin films were prepared by co‐evaporation of Cu, Sn, and S to form Cu2SnS3 (CTS) precursors, which were then annealed at 570 °C in an atmosphere composed of N2, GeS2, and S vapor. The films were then used to fabricate photovoltaic cells with the structure glass/Mo/CTGS/CdS/ZnO:...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physica status solidi. C 2017-06, Vol.14 (6), p.n/a
Hauptverfasser: Sasagawa, Shohei, Yago, Aimi, Kanai, Ayaka, Araki, Hideaki
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Band gap
Cadmium sulfide
Copper
co‐evaporation
Cu2(Sn1−xGex)S3 (CTGS)
Electric potential
Energy gap
Evaporation
Germanium sulfide
Molybdenum
Photovoltaic cells
Quantum efficiency
Solar cells
Sulfur
thin film solar cell
Thin films
Tin
Zinc oxide
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Cu2Sn1−xGexS3 (CTGS) thin films were prepared by co‐evaporation of Cu, Sn, and S to form Cu2SnS3 (CTS) precursors, which were then annealed at 570 °C in an atmosphere composed of N2, GeS2, and S vapor. The films were then used to fabricate photovoltaic cells with the structure glass/Mo/CTGS/CdS/ZnO:Al/Al. A cell with a film composition of Cu2(Sn0.86Ge0.14)S3 fabricated from slightly Cu‐rich CTS (Cu/Sn = 2.07) exhibited a conversion efficiency of 3.4% and an open‐circuit voltage of 0.29 V. The band gap based on the external quantum efficiency was estimated to be approximately 1.0 eV. The open‐circuit voltage was found to be larger than that for a CTS thin film solar cell and increased with band gap energy.
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.201600193