GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration

GaN-based high electron mobility transistors (HEMTs) were fabricated on 200-mm silicon-on-insulator (SOI) substrates possessing multiple crystal orientations. These SOI substrates have the Si (100)-SiO 2 -Si (111) structure, which allows Si (111) to be exposed below the buried oxide to enable GaN ep...

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Veröffentlicht in:	IEEE electron device letters 2017-08, Vol.38 (8), p.1094-1096
Hauptverfasser:	Ko-Tao Lee, Bayram, Can, Piedra, Daniel, Sprogis, Edmund, Deligianni, Hariklia, Krishnan, Balakrishnan, Papasouliotis, George, Paranjpe, Ajit, Aklimi, Eyal, Shepard, Ken, Palacios, Tomas, Sadana, Devendra
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Buried structures CMOS Collapse Crystal structure Current measurement Electron mobility Epitaxial growth Gallium nitride GaN HEMTs high electron mobility transistor (HEMT) High electron mobility transistors metalorganic chemical vapor phase deposition (MOCVD) MODFETs Semiconductor devices Silicon Silicon dioxide Silicon substrates Stress relaxation Substrates Transistors
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Zusammenfassung:	GaN-based high electron mobility transistors (HEMTs) were fabricated on 200-mm silicon-on-insulator (SOI) substrates possessing multiple crystal orientations. These SOI substrates have the Si (100)-SiO 2 -Si (111) structure, which allows Si (111) to be exposed below the buried oxide to enable GaN epitaxial growth adjacent to Si (100). The current collapse in GaN HEMTs of
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2017.2720688