Efficiency Enhancement in InGaN Photovoltaic Cells With Inverted Textured Surface
We report on the improvement of conversion efficiency of InGaN photovoltaic (PV) cells with inverted textured surface (ITS). InGaN PV cells with ITS showed short-circuit current density and conversion efficiency of 0.63 mA/cm 2 and 1.01%, which are 68.17% and 73.33% higher than the characteristics o...
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| Veröffentlicht in: | IEEE photonics technology letters 2017-08, Vol.29 (16), p.1304-1307 |
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| container_title | IEEE photonics technology letters |
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| creator | Wu, Ming-Hsien Horng, Ray-Hua Liao, Wen-Yih Chang, Sheng-Po Chang, Shoou-Jinn |
| description | We report on the improvement of conversion efficiency of InGaN photovoltaic (PV) cells with inverted textured surface (ITS). InGaN PV cells with ITS showed short-circuit current density and conversion efficiency of 0.63 mA/cm 2 and 1.01%, which are 68.17% and 73.33% higher than the characteristics of conventional InGaN PV cells, respectively. The improvement can be attributed to the reduction of both the shading effect of the electrode contact pad and surface reflection of the incident irradiation under one-sun air-mass 1.5-G illumination (100 mW/cm 2 ). |
| doi_str_mv | 10.1109/LPT.2017.2721940 |
| format | Article |
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InGaN PV cells with ITS showed short-circuit current density and conversion efficiency of 0.63 mA/cm 2 and 1.01%, which are 68.17% and 73.33% higher than the characteristics of conventional InGaN PV cells, respectively. The improvement can be attributed to the reduction of both the shading effect of the electrode contact pad and surface reflection of the incident irradiation under one-sun air-mass 1.5-G illumination (100 mW/cm 2 ).</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2017.2721940</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Absorption ; Current density ; Efficiency ; Energy conversion efficiency ; Etching ; Illumination ; InGaN ; inverted texture surface (ITS) ; Irradiation ; Photovoltaic cells ; photovoltaic cells (PV) ; Reflection ; Rough surfaces ; Shading ; Short circuits ; Solar cells ; Surface roughness ; Surface texture</subject><ispartof>IEEE photonics technology letters, 2017-08, Vol.29 (16), p.1304-1307</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-3bef665ad7734e2fd6e03ddb0f086197674dd3f965595d9daea7206e76a2c61d3</citedby><cites>FETCH-LOGICAL-c291t-3bef665ad7734e2fd6e03ddb0f086197674dd3f965595d9daea7206e76a2c61d3</cites><orcidid>0000-0002-4126-0576</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7968376$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7968376$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wu, Ming-Hsien</creatorcontrib><creatorcontrib>Horng, Ray-Hua</creatorcontrib><creatorcontrib>Liao, Wen-Yih</creatorcontrib><creatorcontrib>Chang, Sheng-Po</creatorcontrib><creatorcontrib>Chang, Shoou-Jinn</creatorcontrib><title>Efficiency Enhancement in InGaN Photovoltaic Cells With Inverted Textured Surface</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>We report on the improvement of conversion efficiency of InGaN photovoltaic (PV) cells with inverted textured surface (ITS). InGaN PV cells with ITS showed short-circuit current density and conversion efficiency of 0.63 mA/cm 2 and 1.01%, which are 68.17% and 73.33% higher than the characteristics of conventional InGaN PV cells, respectively. The improvement can be attributed to the reduction of both the shading effect of the electrode contact pad and surface reflection of the incident irradiation under one-sun air-mass 1.5-G illumination (100 mW/cm 2 ).</description><subject>Absorption</subject><subject>Current density</subject><subject>Efficiency</subject><subject>Energy conversion efficiency</subject><subject>Etching</subject><subject>Illumination</subject><subject>InGaN</subject><subject>inverted texture surface (ITS)</subject><subject>Irradiation</subject><subject>Photovoltaic cells</subject><subject>photovoltaic cells (PV)</subject><subject>Reflection</subject><subject>Rough surfaces</subject><subject>Shading</subject><subject>Short circuits</subject><subject>Solar cells</subject><subject>Surface roughness</subject><subject>Surface texture</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1LAzEQxYMoWKt3wcuC56352E2ao5RaC0UrrngMaTKhW7bZms0W-9-b0uLpPWbem4EfQvcEjwjB8mmxrEYUEzGighJZ4As0SELyNCouk8fJE8LKa3TTdRuMSVGyYoA-ps7VpgZvDtnUr7U3sAUfs9pncz_Tb9ly3cZ23zZR1yabQNN02Xcd12m7hxDBZhX8xj4k89kHpw3coiunmw7uzjpEXy_TavKaL95n88nzIjdUkpizFTjOS22FYAVQZzlgZu0KOzzmRAouCmuZk7wsZWml1aAFxRwE19RwYtkQPZ7u7kL700MX1abtg08vFZEUF5wzzlIKn1ImtF0XwKldqLc6HBTB6ghOJXDqCE6dwaXKw6lSA8B_XEg-ZoKzP4v0aSs</recordid><startdate>20170815</startdate><enddate>20170815</enddate><creator>Wu, Ming-Hsien</creator><creator>Horng, Ray-Hua</creator><creator>Liao, Wen-Yih</creator><creator>Chang, Sheng-Po</creator><creator>Chang, Shoou-Jinn</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-4126-0576</orcidid></search><sort><creationdate>20170815</creationdate><title>Efficiency Enhancement in InGaN Photovoltaic Cells With Inverted Textured Surface</title><author>Wu, Ming-Hsien ; Horng, Ray-Hua ; Liao, Wen-Yih ; Chang, Sheng-Po ; Chang, Shoou-Jinn</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-3bef665ad7734e2fd6e03ddb0f086197674dd3f965595d9daea7206e76a2c61d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Absorption</topic><topic>Current density</topic><topic>Efficiency</topic><topic>Energy conversion efficiency</topic><topic>Etching</topic><topic>Illumination</topic><topic>InGaN</topic><topic>inverted texture surface (ITS)</topic><topic>Irradiation</topic><topic>Photovoltaic cells</topic><topic>photovoltaic cells (PV)</topic><topic>Reflection</topic><topic>Rough surfaces</topic><topic>Shading</topic><topic>Short circuits</topic><topic>Solar cells</topic><topic>Surface roughness</topic><topic>Surface texture</topic><toplevel>online_resources</toplevel><creatorcontrib>Wu, Ming-Hsien</creatorcontrib><creatorcontrib>Horng, Ray-Hua</creatorcontrib><creatorcontrib>Liao, Wen-Yih</creatorcontrib><creatorcontrib>Chang, Sheng-Po</creatorcontrib><creatorcontrib>Chang, Shoou-Jinn</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wu, Ming-Hsien</au><au>Horng, Ray-Hua</au><au>Liao, Wen-Yih</au><au>Chang, Sheng-Po</au><au>Chang, Shoou-Jinn</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Efficiency Enhancement in InGaN Photovoltaic Cells With Inverted Textured Surface</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2017-08-15</date><risdate>2017</risdate><volume>29</volume><issue>16</issue><spage>1304</spage><epage>1307</epage><pages>1304-1307</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>We report on the improvement of conversion efficiency of InGaN photovoltaic (PV) cells with inverted textured surface (ITS). InGaN PV cells with ITS showed short-circuit current density and conversion efficiency of 0.63 mA/cm 2 and 1.01%, which are 68.17% and 73.33% higher than the characteristics of conventional InGaN PV cells, respectively. The improvement can be attributed to the reduction of both the shading effect of the electrode contact pad and surface reflection of the incident irradiation under one-sun air-mass 1.5-G illumination (100 mW/cm 2 ).</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2017.2721940</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-4126-0576</orcidid></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Absorption Current density Efficiency Energy conversion efficiency Etching Illumination InGaN inverted texture surface (ITS) Irradiation Photovoltaic cells photovoltaic cells (PV) Reflection Rough surfaces Shading Short circuits Solar cells Surface roughness Surface texture |
| title | Efficiency Enhancement in InGaN Photovoltaic Cells With Inverted Textured Surface |
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