Efficiency Enhancement in InGaN Photovoltaic Cells With Inverted Textured Surface

Efficiency Enhancement in InGaN Photovoltaic Cells With Inverted Textured Surface

We report on the improvement of conversion efficiency of InGaN photovoltaic (PV) cells with inverted textured surface (ITS). InGaN PV cells with ITS showed short-circuit current density and conversion efficiency of 0.63 mA/cm 2 and 1.01%, which are 68.17% and 73.33% higher than the characteristics o...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics technology letters 2017-08, Vol.29 (16), p.1304-1307
Hauptverfasser: Wu, Ming-Hsien, Horng, Ray-Hua, Liao, Wen-Yih, Chang, Sheng-Po, Chang, Shoou-Jinn
Format: Artikel
Sprache:eng
Schlagworte:
Absorption
Current density
Efficiency
Energy conversion efficiency
Etching
Illumination
InGaN
inverted texture surface (ITS)
Irradiation
Photovoltaic cells
photovoltaic cells (PV)
Reflection
Rough surfaces
Shading
Short circuits
Solar cells
Surface roughness
Surface texture
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report on the improvement of conversion efficiency of InGaN photovoltaic (PV) cells with inverted textured surface (ITS). InGaN PV cells with ITS showed short-circuit current density and conversion efficiency of 0.63 mA/cm 2 and 1.01%, which are 68.17% and 73.33% higher than the characteristics of conventional InGaN PV cells, respectively. The improvement can be attributed to the reduction of both the shading effect of the electrode contact pad and surface reflection of the incident irradiation under one-sun air-mass 1.5-G illumination (100 mW/cm 2 ).
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2017.2721940