BODIPY-based conjugated polymer covalently grafted reduced graphene oxide for flexible nonvolatile memory devices

The data storage performance, stability and reliability of the graphene memories have advanced significantly towards practical information storage applications. Using highly dispersed 4-bromobenzene functionalized RGO (BB-RGO) as two dimensional template, a new poly[(1,4-diethynylbenzene)-alt-boron...

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Veröffentlicht in:Carbon (New York) 2017-05, Vol.116, p.713-721
Hauptverfasser: Sun, Sai, Zhuang, Xiaodong, Wang, Luxin, Liu, Bo, Zhang, Bin, Chen, Yu
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Sprache:eng
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Zusammenfassung:The data storage performance, stability and reliability of the graphene memories have advanced significantly towards practical information storage applications. Using highly dispersed 4-bromobenzene functionalized RGO (BB-RGO) as two dimensional template, a new poly[(1,4-diethynylbenzene)-alt-boron dipyrro-methene]-grafted reduced graphene oxide (PDBD-g-RGO) was synthesized via Sonogashira coupling reaction. Covalent grafting of PDBD onto BB-RGO gives rise to a 34-cm−1 blue shift of the D band and a 7-cm−1 red shift of the G band when compared to the Raman spectrum of BB-RGO. A transparent and flexible nonvolatile memory device with configuration of Al/PDBD-g-RGO/ITO-coated poly(ethylene terephthalate) (PET) exhibited typical storage performance of rewritable memory that can be electrically erased and reprogrammed, with turn-on and turn-off voltages of 1.55 and −1.80 V, and an ON/OFF current ratio exceeding 105. The memory behaviors of the flexible device were almost unchanged under the bending test. A new poly[(1,4-diethynylbenzene)-alt-boron dipyrromethene]-grafted RGO (PDBD-g-RGO) was synthesized. This material-based memory device exhibited typical storage performance of rewritable memory, with turn-on and turn-off voltages of 1.55 and −1.80 V, and an ON/OFF current ratio of more than 105. [Display omitted]
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2017.02.034