Publisher Correction: Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide transistors
An amendment to this paper has been published and can be accessed via a link at the top of the paper.
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| Veröffentlicht in: | npj computational materials 2020-04, Vol.6 (1), Article 37 |
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| container_title | npj computational materials |
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| creator | Ueda, Akiko Zhang, Yijin Sano, Nobuyuki Imamura, Hiroshi Iwasa, Yoshihiro |
| description | An amendment to this paper has been published and can be accessed via a link at the top of the paper. |
| doi_str_mv | 10.1038/s41524-020-0314-9 |
| format | Article |
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| source | Nature Open Access; DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Springer Nature OA/Free Journals |
| subjects | 639/166/987 639/925/927/1007 Characterization and Evaluation of Materials Chemistry and Materials Science Computational Intelligence Materials Science Mathematical and Computational Engineering Mathematical and Computational Physics Mathematical Modeling and Industrial Mathematics Publisher Correction Theoretical |
| title | Publisher Correction: Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide transistors |
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