Publisher Correction: Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide transistors

Publisher Correction: Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide transistors

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

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Veröffentlicht in:npj computational materials 2020-04, Vol.6 (1), Article 37
Hauptverfasser: Ueda, Akiko, Zhang, Yijin, Sano, Nobuyuki, Imamura, Hiroshi, Iwasa, Yoshihiro
Format: Artikel
Sprache:eng
Schlagworte:
639/166/987
639/925/927/1007
Characterization and Evaluation of Materials
Chemistry and Materials Science
Computational Intelligence
Materials Science
Mathematical and Computational Engineering
Mathematical and Computational Physics
Mathematical Modeling and Industrial Mathematics
Publisher Correction
Theoretical
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Zusammenfassung:An amendment to this paper has been published and can be accessed via a link at the top of the paper.
ISSN:2057-3960
2057-3960
DOI:10.1038/s41524-020-0314-9