Diester Molecules for Organic-Based Electrical and Photoelectrical Devices
Diester derivatives of terephthalic acid molecules were synthesized according to the literature. Au/Diester derivatives/ n -Si organic–inorganic (OI) heterojunction-type devices were fabricated, and the current–voltage ( I – V ) characteristics of the devices have been investigated at room temperatu...
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| Veröffentlicht in: | Journal of electronic materials 2017-07, Vol.46 (7), p.3958-3964 |
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| container_title | Journal of electronic materials |
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| creator | Topal, Giray Tombak, Ahmet Yigitalp, Esref Batibay, Derya Kilicoglu, Tahsin Ocak, Yusuf Selim |
| description | Diester derivatives of terephthalic acid molecules were synthesized according to the literature. Au/Diester derivatives/
n
-Si organic–inorganic (OI) heterojunction-type devices were fabricated, and the current–voltage (
I
–
V
) characteristics of the devices have been investigated at room temperature.
I
–
V
characteristics demonstrated that all diodes had excellent rectification properties. Primary diode parameters such as series resistance and barrier height were extracted by using semi-log
I
–
V
plots and Norde methods, and were compared. It was seen that there was a substantial agreement between results obtained from two methods. Calculated barrier height values were about the same with 0.02-eV differences that were attributed to the series resistance. Ideality factors, which show how the diode closes to ideal diodes, were also extracted from semi-log
I
–
V
plots. Thus, the modification of the Au/
n
-Si diode potential barrier was accomplished using diester derivatives as an interlayer. The
I
–
V
measurements were repeated to characterize the devices at 100 mW/cm
2
illumination intensity with the help of a solar simulator with an AM1.5G filter. |
| doi_str_mv | 10.1007/s11664-017-5446-4 |
| format | Article |
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n
-Si organic–inorganic (OI) heterojunction-type devices were fabricated, and the current–voltage (
I
–
V
) characteristics of the devices have been investigated at room temperature.
I
–
V
characteristics demonstrated that all diodes had excellent rectification properties. Primary diode parameters such as series resistance and barrier height were extracted by using semi-log
I
–
V
plots and Norde methods, and were compared. It was seen that there was a substantial agreement between results obtained from two methods. Calculated barrier height values were about the same with 0.02-eV differences that were attributed to the series resistance. Ideality factors, which show how the diode closes to ideal diodes, were also extracted from semi-log
I
–
V
plots. Thus, the modification of the Au/
n
-Si diode potential barrier was accomplished using diester derivatives as an interlayer. The
I
–
V
measurements were repeated to characterize the devices at 100 mW/cm
2
illumination intensity with the help of a solar simulator with an AM1.5G filter.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-017-5446-4</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemical synthesis ; Chemistry and Materials Science ; Current voltage characteristics ; Derivatives ; Devices ; Diodes ; Electric potential ; Electronics and Microelectronics ; Illumination ; Instrumentation ; Interlayers ; Materials Science ; Mathematical analysis ; Optical and Electronic Materials ; Resistance factors ; Simulation ; Solid State Physics ; Terephthalic acid</subject><ispartof>Journal of electronic materials, 2017-07, Vol.46 (7), p.3958-3964</ispartof><rights>The Minerals, Metals & Materials Society 2017</rights><rights>Journal of Electronic Materials is a copyright of Springer, 2017.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-7970add870b2ca063618e16e5995d741e851a5dc1118df4fc360d081203137683</citedby><cites>FETCH-LOGICAL-c355t-7970add870b2ca063618e16e5995d741e851a5dc1118df4fc360d081203137683</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-017-5446-4$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-017-5446-4$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Topal, Giray</creatorcontrib><creatorcontrib>Tombak, Ahmet</creatorcontrib><creatorcontrib>Yigitalp, Esref</creatorcontrib><creatorcontrib>Batibay, Derya</creatorcontrib><creatorcontrib>Kilicoglu, Tahsin</creatorcontrib><creatorcontrib>Ocak, Yusuf Selim</creatorcontrib><title>Diester Molecules for Organic-Based Electrical and Photoelectrical Devices</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>Diester derivatives of terephthalic acid molecules were synthesized according to the literature. Au/Diester derivatives/
n
-Si organic–inorganic (OI) heterojunction-type devices were fabricated, and the current–voltage (
I
–
V
) characteristics of the devices have been investigated at room temperature.
I
–
V
characteristics demonstrated that all diodes had excellent rectification properties. Primary diode parameters such as series resistance and barrier height were extracted by using semi-log
I
–
V
plots and Norde methods, and were compared. It was seen that there was a substantial agreement between results obtained from two methods. Calculated barrier height values were about the same with 0.02-eV differences that were attributed to the series resistance. Ideality factors, which show how the diode closes to ideal diodes, were also extracted from semi-log
I
–
V
plots. Thus, the modification of the Au/
n
-Si diode potential barrier was accomplished using diester derivatives as an interlayer. The
I
–
V
measurements were repeated to characterize the devices at 100 mW/cm
2
illumination intensity with the help of a solar simulator with an AM1.5G filter.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemical synthesis</subject><subject>Chemistry and Materials Science</subject><subject>Current voltage characteristics</subject><subject>Derivatives</subject><subject>Devices</subject><subject>Diodes</subject><subject>Electric potential</subject><subject>Electronics and Microelectronics</subject><subject>Illumination</subject><subject>Instrumentation</subject><subject>Interlayers</subject><subject>Materials Science</subject><subject>Mathematical analysis</subject><subject>Optical and Electronic Materials</subject><subject>Resistance factors</subject><subject>Simulation</subject><subject>Solid State Physics</subject><subject>Terephthalic acid</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>BENPR</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kEtLAzEUhYMoWKs_wN2A62ju5DlLbeuLSl0ouAsxydQp46QmM4L_3pQRdOPqwr3nnHv4EDoFcg6EyIsEIATDBCTmjAnM9tAEOKMYlHjZRxNCBWBeUn6IjlLaEAIcFEzQ_bzxqfexeAitt0PrU1GHWKzi2nSNxVcmeVcs8qmPjTVtYTpXPL6FPvjf3dx_NtanY3RQmzb5k585Rc_Xi6fZLV6ubu5ml0tsKec9lpUkxjklyWtpDRG5mPIgPK8q7iQDrzgY7iwAKFez2lJBHFFQEgpUCkWn6GzM3cbwMeT2ehOG2OWXGqqcxytFaVbBqLIxpBR9rbexeTfxSwPRO2R6RKYzMr1Dpln2lKMnZW239vFP8r-mb-bEbN4</recordid><startdate>20170701</startdate><enddate>20170701</enddate><creator>Topal, Giray</creator><creator>Tombak, Ahmet</creator><creator>Yigitalp, Esref</creator><creator>Batibay, Derya</creator><creator>Kilicoglu, Tahsin</creator><creator>Ocak, Yusuf Selim</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20170701</creationdate><title>Diester Molecules for Organic-Based Electrical and Photoelectrical Devices</title><author>Topal, Giray ; Tombak, Ahmet ; Yigitalp, Esref ; Batibay, Derya ; Kilicoglu, Tahsin ; Ocak, Yusuf Selim</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-7970add870b2ca063618e16e5995d741e851a5dc1118df4fc360d081203137683</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemical synthesis</topic><topic>Chemistry and Materials Science</topic><topic>Current voltage characteristics</topic><topic>Derivatives</topic><topic>Devices</topic><topic>Diodes</topic><topic>Electric potential</topic><topic>Electronics and Microelectronics</topic><topic>Illumination</topic><topic>Instrumentation</topic><topic>Interlayers</topic><topic>Materials Science</topic><topic>Mathematical analysis</topic><topic>Optical and Electronic Materials</topic><topic>Resistance factors</topic><topic>Simulation</topic><topic>Solid State Physics</topic><topic>Terephthalic acid</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Topal, Giray</creatorcontrib><creatorcontrib>Tombak, Ahmet</creatorcontrib><creatorcontrib>Yigitalp, Esref</creatorcontrib><creatorcontrib>Batibay, Derya</creatorcontrib><creatorcontrib>Kilicoglu, Tahsin</creatorcontrib><creatorcontrib>Ocak, Yusuf Selim</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Topal, Giray</au><au>Tombak, Ahmet</au><au>Yigitalp, Esref</au><au>Batibay, Derya</au><au>Kilicoglu, Tahsin</au><au>Ocak, Yusuf Selim</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Diester Molecules for Organic-Based Electrical and Photoelectrical Devices</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2017-07-01</date><risdate>2017</risdate><volume>46</volume><issue>7</issue><spage>3958</spage><epage>3964</epage><pages>3958-3964</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>Diester derivatives of terephthalic acid molecules were synthesized according to the literature. Au/Diester derivatives/
n
-Si organic–inorganic (OI) heterojunction-type devices were fabricated, and the current–voltage (
I
–
V
) characteristics of the devices have been investigated at room temperature.
I
–
V
characteristics demonstrated that all diodes had excellent rectification properties. Primary diode parameters such as series resistance and barrier height were extracted by using semi-log
I
–
V
plots and Norde methods, and were compared. It was seen that there was a substantial agreement between results obtained from two methods. Calculated barrier height values were about the same with 0.02-eV differences that were attributed to the series resistance. Ideality factors, which show how the diode closes to ideal diodes, were also extracted from semi-log
I
–
V
plots. Thus, the modification of the Au/
n
-Si diode potential barrier was accomplished using diester derivatives as an interlayer. The
I
–
V
measurements were repeated to characterize the devices at 100 mW/cm
2
illumination intensity with the help of a solar simulator with an AM1.5G filter.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-017-5446-4</doi><tpages>7</tpages></addata></record> |
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| language | eng |
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| subjects | Characterization and Evaluation of Materials Chemical synthesis Chemistry and Materials Science Current voltage characteristics Derivatives Devices Diodes Electric potential Electronics and Microelectronics Illumination Instrumentation Interlayers Materials Science Mathematical analysis Optical and Electronic Materials Resistance factors Simulation Solid State Physics Terephthalic acid |
| title | Diester Molecules for Organic-Based Electrical and Photoelectrical Devices |
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