Diester Molecules for Organic-Based Electrical and Photoelectrical Devices

Diester derivatives of terephthalic acid molecules were synthesized according to the literature. Au/Diester derivatives/ n -Si organic–inorganic (OI) heterojunction-type devices were fabricated, and the current–voltage ( I – V ) characteristics of the devices have been investigated at room temperature. I – V characteristics demonstrated that all diodes had excellent rectification properties. Primary diode parameters such as series resistance and barrier height were extracted by using semi-log I – V plots and Norde methods, and were compared. It was seen that there was a substantial agreement between results obtained from two methods. Calculated barrier height values were about the same with 0.02-eV differences that were attributed to the series resistance. Ideality factors, which show how the diode closes to ideal diodes, were also extracted from semi-log I – V plots. Thus, the modification of the Au/ n -Si diode potential barrier was accomplished using diester derivatives as an interlayer. The I – V measurements were repeated to characterize the devices at 100 mW/cm 2 illumination intensity with the help of a solar simulator with an AM1.5G filter.