X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well

In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As HEMT heterostructures on InP substrates with elastically strained InAs insert in combined quantum well (QW) have been investigated using a combination of X-ray methods: double-crystal X-ray diffraction, X-ray reflectivity, and reciprocal space...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Crystallography reports 2017-05, Vol.62 (3), p.355-363
Hauptverfasser:	Blagov, A. E., Galiev, G. B., Imamov, R. M., Klimov, E. A., Kondratev, O. A., Pisarevskii, Yu. V., Prosekov, P. A., Pushkarev, S. S., Seregin, A. Yu, Koval’chuk, M. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystal structure Crystallography and Scattering Methods Diffraction and Scattering of Ionizing Radiations Heterostructures Indium arsenides Information dissemination Mapping Nanostructure Physics Physics and Astronomy Reflectance Structural analysis Substrates Systems analysis X ray analysis X-ray diffraction X-rays
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As HEMT heterostructures on InP substrates with elastically strained InAs insert in combined quantum well (QW) have been investigated using a combination of X-ray methods: double-crystal X-ray diffraction, X-ray reflectivity, and reciprocal space mapping. This approach has provided detailed complementary information about the layered and real crystal structures of the samples. The data obtained have made it possible to perform structural analysis of the multilayer systems and compare their characteristics with specified technological parameters, due to which the HEMT growth technology can be corrected and improved.
ISSN:	1063-7745 1562-689X
DOI:	10.1134/S1063774517030026