P‐16: Implementation of TCAD Simulation of a‐IGZO Corbino TFTs for AMOLED Application

P‐16: Implementation of TCAD Simulation of a‐IGZO Corbino TFTs for AMOLED Application

We studied the effects of Corbino structure amorphous indium‐galium‐zinc oxide (a‐IGZO) thin film transistors (TFTs) using TCAD and circuit simulator. The Corbino structure shows the special behavior with drain electrode in inner or outer. By simulation, we confirm the Corbino structure have better...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2017-05, Vol.48 (1), p.1284-1286
Hauptverfasser: Han, Ji-Ung, Lee, Won-Seok, Tak, Nam-Kyun, Choi, In-Chol, Kim, Jin-young, Hwang, Man-gyu, Geng, Di, Choe, Younwoo, Jang, Jin
Format: Artikel
Sprache:eng
Schlagworte:
Active matrix displays
Circuit
Circuits
Corbino
Indium
OxideTFT
Semiconductor devices
Simulation
Spice simulation
TCAD simulation
Thin film transistors
Thin-Film-Transistor (TFT)
Zinc oxide
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Zusammenfassung:We studied the effects of Corbino structure amorphous indium‐galium‐zinc oxide (a‐IGZO) thin film transistors (TFTs) using TCAD and circuit simulator. The Corbino structure shows the special behavior with drain electrode in inner or outer. By simulation, we confirm the Corbino structure have better performance than conventional structure for AMOLED pixel circuit.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.11872