P‐228: Late‐News Poster: Self‐Aligned Planar Metal Double‐Gate Cu‐MIC Poly‐Ge TFTs Fabricated at 300°C on a Glass Substrate

Self‐aligned planar metal double‐gate p‐channel polycrystalline‐germanium thin‐film transistors were fabricated at 300 °C on a glass substrate by copper metal induced crystallization and lateral metallization of source‐drain using aluminum electrodes. A nominal mobility of 25 cm2 /Vs was obtained owing to the high hole mobility of germanium, and an on/off ratio of 30 was achieved by the double‐gate structure. Our proposal is expected to be a novel method for fabricating high‐performance TFTs on plastic substrates.