21‐2: Highly Reliable Amorphous Indium‐Gallium‐Zinc‐Tin‐Oxide TFTs with Back‐Channel‐Etch Structure

21‐2: Highly Reliable Amorphous Indium‐Gallium‐Zinc‐Tin‐Oxide TFTs with Back‐Channel‐Etch Structure

Back‐channel‐etch‐structured thin‐film transistors (TFTs) employing amorphous Indium‐Gallium‐Zinc‐Tin‐Oxide (IGZTO) and Mo/Al as active layer and source/drain, respectively, were demonstrated with good electronic property and bias‐temperature‐stress stability. LCD panels addressed by such TFTs with...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2017-05, Vol.48 (1), p.291-293
Hauptverfasser: Lu, Xin-Hong, Wang, Ke, Hu, Hehe, Zhang, Wenlin, Ning, Ce, Yang, Wei, Wang, Jiushi, Yao, Qi, Cao, Zhanfeng, Yuan, Guangcai, Huang, Yinglong
Format: Artikel
Sprache:eng
Schlagworte:
Amorphous structure
Back-Channel-Etch
Bias
Circuit reliability
Etching
Gallium
Humidity
IGZTO TFTs
Indium
Molybdenum
Panels
Reliability
Semiconductor devices
Stability
Stresses
Thin film transistors
Tin oxides
Zinc oxide
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Zusammenfassung:Back‐channel‐etch‐structured thin‐film transistors (TFTs) employing amorphous Indium‐Gallium‐Zinc‐Tin‐Oxide (IGZTO) and Mo/Al as active layer and source/drain, respectively, were demonstrated with good electronic property and bias‐temperature‐stress stability. LCD panels addressed by such TFTs with gate‐driver‐on‐array circuit passed the 1000‐ hour high‐temperature‐operating and high‐temperature/humidity‐operating reliability tests, revealing excellent prospect for mass‐production.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.11608