21‐3: Reliability of Coplanar Oxide TFTs : Analysis and Improvement

21‐3: Reliability of Coplanar Oxide TFTs : Analysis and Improvement

We confirm that the PBTS instability of coplanar InGaZnO TFTs can be improved through the minimization of Non‐Bridging Oxygen Hole Centers (NBOHC) and optimization of hydrogen passivation in the GI/ACT interface region. The quantitative analysis of hydrogen and oxygen in each region are obtained fro...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2017-05, Vol.48 (1), p.294-296
Hauptverfasser: Baeck, Ju-Heyuck, Oh, Saeroonter, Lee, Dohyung, Park, Taeuk, Bae, Jong Uk, Park, Kwon-Shik, Yoon, SooYong, Kang, InByeong
Format: Artikel
Sprache:eng
Schlagworte:
a-IGZO
Bonding
Bridging
Capacitance
coplanar
Correlation analysis
Density
Electric potential
ERDA
Hydrogen
interface trap density (Dit)
Optimization
Oxide TFT
Oxygen
Passivity
PBTS
Photonics
phto C-V method
Quantitative analysis
RBS
Reliability analysis
Stability analysis
top-gate
XRR
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Zusammenfassung:We confirm that the PBTS instability of coplanar InGaZnO TFTs can be improved through the minimization of Non‐Bridging Oxygen Hole Centers (NBOHC) and optimization of hydrogen passivation in the GI/ACT interface region. The quantitative analysis of hydrogen and oxygen in each region are obtained from physical property measurements. Trap density in GI/ACT interface layer is obtained by photonic capacitance‐voltage measurements which are correlated with PBTS characteristics. A decrease of under coordinated bonding states lessens electron trap density, which brings improvement in PBTS from Vth = 2.61V to 0.21V by process optimization.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.11611