P‐32: Light Shielding Layers Enabled Full Swing Multi‐Layer MoS2 Inverters For the Application of Photodetectors

Multi‐layered MoS2 inverters with light shielding (LS) layers were fabricated and demonstrated for application in highly sensitive photo detectors, exploiting the particular advantages of an atomically thin layer and a sizable electrical band gap. The photoleakage behaviors of the inverters under changing wavelengths of light were experimentally demonstrated to occur in a controlled manner, and were analytically validated by load‐line analysis. When the inverters were operated with a depletion load in the light of blue light emitting diodes (LEDs), the low noise margin (NML) and transition width were significantly enhanced, by approximately 20 and 220%, respectively, as compared to those of the inverters in the dark.