Thermoelectric properties of Mg2Si1−xSbx (0 ≤ x ≤ 0.025) synthesized by the high-temperature high-pressure method
In this work, the thermoelectric materials Mg 2 Si 1− x Sb x (0 ≤ x ≤ 0.025) were prepared by high-temperature high-pressure (HTHP) method, and the temperature dependence of the thermoelectric properties were investigated. Compared with other traditional methods, the processing time of the HTHP me...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2017-07, Vol.28 (13), p.9535-9541 |
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| container_end_page | 9541 |
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| container_issue | 13 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Zhu, Yaju Li, Jialiang Duan, Bo Li, Yao Zhai, Pengcheng Li, Peng |
| description | In this work, the thermoelectric materials Mg
2
Si
1−
x
Sb
x
(0 ≤
x
≤ 0.025) were prepared by high-temperature high-pressure (HTHP) method, and the temperature dependence of the thermoelectric properties were investigated. Compared with other traditional methods, the processing time of the HTHP method was sharply reduced from a few days to |
| doi_str_mv | 10.1007/s10854-017-6700-5 |
| format | Article |
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2
Si
1−
x
Sb
x
(0 ≤
x
≤ 0.025) were prepared by high-temperature high-pressure (HTHP) method, and the temperature dependence of the thermoelectric properties were investigated. Compared with other traditional methods, the processing time of the HTHP method was sharply reduced from a few days to <15 min. The samples are synthesized at 1073 K under a pressure of 2.5 GPa. With rising temperature, the electrical transport properties are strengthened, while the thermal conductivity (
κ
) evidently declines. The maximum thermoelectric figure of merit (
ZT
) of the Mg
2
Si
0.99
Sb
0.01
reaches 0.55 at 773 K.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-017-6700-5</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Electric properties ; Electrical resistivity ; Figure of merit ; Heat conductivity ; Intermetallic compounds ; Magnesium ; Materials Science ; Optical and Electronic Materials ; Plasma sintering ; Spectrum analysis ; Temperature dependence ; Thermal conductivity ; Thermoelectric materials</subject><ispartof>Journal of materials science. Materials in electronics, 2017-07, Vol.28 (13), p.9535-9541</ispartof><rights>Springer Science+Business Media New York 2017</rights><rights>Journal of Materials Science: Materials in Electronics is a copyright of Springer, 2017.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-p226t-4fca82c38b544d957f0259e22e4947dc9fe666de6dfa1aebd284588664bfad9e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-017-6700-5$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-017-6700-5$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Zhu, Yaju</creatorcontrib><creatorcontrib>Li, Jialiang</creatorcontrib><creatorcontrib>Duan, Bo</creatorcontrib><creatorcontrib>Li, Yao</creatorcontrib><creatorcontrib>Zhai, Pengcheng</creatorcontrib><creatorcontrib>Li, Peng</creatorcontrib><title>Thermoelectric properties of Mg2Si1−xSbx (0 ≤ x ≤ 0.025) synthesized by the high-temperature high-pressure method</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>In this work, the thermoelectric materials Mg
2
Si
1−
x
Sb
x
(0 ≤
x
≤ 0.025) were prepared by high-temperature high-pressure (HTHP) method, and the temperature dependence of the thermoelectric properties were investigated. Compared with other traditional methods, the processing time of the HTHP method was sharply reduced from a few days to <15 min. The samples are synthesized at 1073 K under a pressure of 2.5 GPa. With rising temperature, the electrical transport properties are strengthened, while the thermal conductivity (
κ
) evidently declines. The maximum thermoelectric figure of merit (
ZT
) of the Mg
2
Si
0.99
Sb
0.01
reaches 0.55 at 773 K.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Electric properties</subject><subject>Electrical resistivity</subject><subject>Figure of merit</subject><subject>Heat conductivity</subject><subject>Intermetallic compounds</subject><subject>Magnesium</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Plasma sintering</subject><subject>Spectrum analysis</subject><subject>Temperature dependence</subject><subject>Thermal conductivity</subject><subject>Thermoelectric materials</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNpNUMtOwzAQtBBIlMIHcIvEBQ4ua8d2nCOqeElFHFokblEemyZV2wTblVoucKRXvoEv65fgqhXisju7Gs1ohpBzBj0GEF1bBloKCiyiKgKg8oB0mIxCKjR_PSQdiGVEheT8mJxYOwEAJULdIR-jCs2swSnmztR50JqmReNqtEFTBk9jPqzZ5ut7OcyWwSVsPteb9Y-fyz8EPeDyKrCruavQ1u9YBNkq8Dio6nFFHc68XuoWZv9oDVq7vWboqqY4JUdlOrV4tt9d8nJ3O-o_0MHz_WP_ZkBbzpWjosxTzfNQZ1KIwmcpvWuMnKOIRVTkcYlKqQJVUaYsxazgWkitlRJZmRYxhl1ysdP1Ad8WaF0yaRZm7i0TFkOoIZKCeRbfsWxr6vkYzT8WJNuik13RiS862RadyPAXKil4jg</recordid><startdate>20170701</startdate><enddate>20170701</enddate><creator>Zhu, Yaju</creator><creator>Li, Jialiang</creator><creator>Duan, Bo</creator><creator>Li, Yao</creator><creator>Zhai, Pengcheng</creator><creator>Li, Peng</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope></search><sort><creationdate>20170701</creationdate><title>Thermoelectric properties of Mg2Si1−xSbx (0 ≤ x ≤ 0.025) synthesized by the high-temperature high-pressure method</title><author>Zhu, Yaju ; Li, Jialiang ; Duan, Bo ; Li, Yao ; Zhai, Pengcheng ; Li, Peng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p226t-4fca82c38b544d957f0259e22e4947dc9fe666de6dfa1aebd284588664bfad9e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Electric properties</topic><topic>Electrical resistivity</topic><topic>Figure of merit</topic><topic>Heat conductivity</topic><topic>Intermetallic compounds</topic><topic>Magnesium</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Plasma sintering</topic><topic>Spectrum analysis</topic><topic>Temperature dependence</topic><topic>Thermal conductivity</topic><topic>Thermoelectric materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhu, Yaju</creatorcontrib><creatorcontrib>Li, Jialiang</creatorcontrib><creatorcontrib>Duan, Bo</creatorcontrib><creatorcontrib>Li, Yao</creatorcontrib><creatorcontrib>Zhai, Pengcheng</creatorcontrib><creatorcontrib>Li, Peng</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhu, Yaju</au><au>Li, Jialiang</au><au>Duan, Bo</au><au>Li, Yao</au><au>Zhai, Pengcheng</au><au>Li, Peng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermoelectric properties of Mg2Si1−xSbx (0 ≤ x ≤ 0.025) synthesized by the high-temperature high-pressure method</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2017-07-01</date><risdate>2017</risdate><volume>28</volume><issue>13</issue><spage>9535</spage><epage>9541</epage><pages>9535-9541</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>In this work, the thermoelectric materials Mg
2
Si
1−
x
Sb
x
(0 ≤
x
≤ 0.025) were prepared by high-temperature high-pressure (HTHP) method, and the temperature dependence of the thermoelectric properties were investigated. Compared with other traditional methods, the processing time of the HTHP method was sharply reduced from a few days to <15 min. The samples are synthesized at 1073 K under a pressure of 2.5 GPa. With rising temperature, the electrical transport properties are strengthened, while the thermal conductivity (
κ
) evidently declines. The maximum thermoelectric figure of merit (
ZT
) of the Mg
2
Si
0.99
Sb
0.01
reaches 0.55 at 773 K.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-017-6700-5</doi><tpages>7</tpages></addata></record> |
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| ispartof | Journal of materials science. Materials in electronics, 2017-07, Vol.28 (13), p.9535-9541 |
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| language | eng |
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| source | SpringerNature Journals |
| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Electric properties Electrical resistivity Figure of merit Heat conductivity Intermetallic compounds Magnesium Materials Science Optical and Electronic Materials Plasma sintering Spectrum analysis Temperature dependence Thermal conductivity Thermoelectric materials |
| title | Thermoelectric properties of Mg2Si1−xSbx (0 ≤ x ≤ 0.025) synthesized by the high-temperature high-pressure method |
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