Thermoelectric properties of Mg2Si1−xSbx (0 ≤ x ≤ 0.025) synthesized by the high-temperature high-pressure method

Thermoelectric properties of Mg2Si1−xSbx (0 ≤ x ≤ 0.025) synthesized by the high-temperature high-pressure method

In this work, the thermoelectric materials Mg 2 Si 1− x Sb x (0 ≤  x  ≤ 0.025) were prepared by high-temperature high-pressure (HTHP) method, and the temperature dependence of the thermoelectric properties were investigated. Compared with other traditional methods, the processing time of the HTHP me...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of materials science. Materials in electronics 2017-07, Vol.28 (13), p.9535-9541
Hauptverfasser: Zhu, Yaju, Li, Jialiang, Duan, Bo, Li, Yao, Zhai, Pengcheng, Li, Peng
Format: Artikel
Sprache:eng
Schlagworte:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electric properties
Electrical resistivity
Figure of merit
Heat conductivity
Intermetallic compounds
Magnesium
Materials Science
Optical and Electronic Materials
Plasma sintering
Spectrum analysis
Temperature dependence
Thermal conductivity
Thermoelectric materials
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this work, the thermoelectric materials Mg 2 Si 1− x Sb x (0 ≤  x  ≤ 0.025) were prepared by high-temperature high-pressure (HTHP) method, and the temperature dependence of the thermoelectric properties were investigated. Compared with other traditional methods, the processing time of the HTHP method was sharply reduced from a few days to
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-017-6700-5