Switching of Cu/MoOx/TiN CBRAM at MoOx/TiN interface

For dynamical observation of CBRAM microstructure, in situ transmission electron microscopy (in situ TEM) was performed on Cu/MoOx/TiN during the resistive switching. It was confirmed that the local area near the MoOx/TiN interface contributes to resistive switching. The Cu deposit at the bottom of the MoOx layer swelled into the oxidized thin layer of the TiN bottom electrode, and a thin filament of 3–5 nm diameter was formed in the Set process. The reversal change was seen in the Reset process. On increasing the switching power, a microstructural change in the MoOx layer was also seen, and the CBRAM film was finally destroyed.