New pixel driving circuit using self‐discharging compensation method for high‐resolution OLED micro displays on a silicon backplane

A new 4T2C pixel circuit formed on a silicon substrate is proposed to realize a high‐resolution 7.8‐μm pixel pitch AMOLED microdisplay. In order to achieve high luminance uniformity, the pixel circuit compensates its Vth variation of the MOSFET for the driving transistor internally by using self‐discharging method. Also presented are 0.5‐in Quad‐VGA and 1.25‐in wide Quad‐XGA microdisplays with the proposed pixel circuit. A novel 4T2C PMOS pixel circuit is proposed to realize a high‐resolution 7.8‐µm pixel pitch OLED microdisplay. In order to achieve high luminance uniformity, the pixel circuit compensates its Vth variation of the MOSFET for the driving transistor internally by using self‐discharging method: 0.5‐inch Quad‐VGA and 1.25‐inch Wide Quad‐XGA microdisplays with the proposed compensation architecture are also presented.