Origin of Room Temperature Ferromagnetism in Cr-Doped Lead-Free Ferroelectric Bi^sub 0.5^Na^sub 0.5^TiO3 Materials

The development of multiferroic materials based on lead-free ferroelectric material provides an opportunity to fabricate next-generation electronic devices. In this work, Cr-doped lead-free ferroelectric Bi0.5Na0.5TiO3 materials were synthesized by using the sol-gel method. The optical band gap was reduced from 3.12 eV to 2.12 eV for undoped and 9 mol.% Cr-doped Bi0.5Na0.5TiO3 with the substitution of Cr at the Ti-site. Cr-doped Bi0.5Na0.5TiO3 materials exhibited weak ferromagnetism at room temperature. Saturation magnetization was approximately 0.08 [mu] B/Cr at 5 K. Our work will facilitate the further understanding of the role of transition metal ferromagnetism in lead-free ferroelectric materials at room temperature.