Simulation and optimization of 2.6–2.8 μm GaSb-based VCSELs

We present the simulation results of threshold operation of mid-infrared GaSb-based vertical-cavity surface-emitting lasers (VCSELs) obtained with the use of comprehensive fully self-consistent optical-electrical-thermal-recombination numerical model. The results show that by a proper design of VCSE...

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Veröffentlicht in:	Optical and quantum electronics 2017-05, Vol.49 (5), p.1-7, Article 199
Hauptverfasser:	Piskorski, Łukasz, Marciniak, Magdalena, Walczak, Jarosław
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Computer Communication Networks Electrical Engineering Gallium antimonides Infrared lasers Lasers Numerical models Numerical Simulation of Optoelectronic Devices 2016 Optical Devices Optics Optimization Photonics Physics Physics and Astronomy Quantum wells Room temperature Threshold currents Vertical cavity surface emission lasers
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Zusammenfassung:	We present the simulation results of threshold operation of mid-infrared GaSb-based vertical-cavity surface-emitting lasers (VCSELs) obtained with the use of comprehensive fully self-consistent optical-electrical-thermal-recombination numerical model. The results show that by a proper design of VCSEL structure and composition of the active region it is theoretically possible to achieve room-temperature (RT) threshold operation for wavelength of 2.8 μm which is about 0.2 μm longer than those reported so far in the literature for III-V VCSELs with type-I quantum wells. Calculated values of the RT threshold current were equal to 2.5 and 4.0 mA for tunnel-junction diameters of 2 and 4 μm, respectively.
ISSN:	0306-8919 1572-817X
DOI:	10.1007/s11082-017-1027-2