Effect of thermal annealing on scintillation properties of Ce:Gd2Y1Ga2.7Al2.3O12 under different atmosphere
Cerium-doped 1% Ce:Gd 2 Y 1 Ga 2.7 Al 2.3 O 12 (GYGAG) single crystal samples grown via Czochralski method were annealed under air, O 2 and N 2 atmospheres from 350 to 1400 °C. The X-ray excited luminescence spectra, energy spectra and UV as well as thermally stimulated luminescence (TSL) spectra we...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2017-05, Vol.123 (5), p.1-6, Article 384 |
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| container_title | Applied physics. A, Materials science & processing |
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| creator | Wang, Chao Ding, Dongzhou Wu, Yuntao Li, Huanying Chen, Xiaofeng Shi, Jian Wang, Qingqing Ye, Le Ren, Guohao |
| description | Cerium-doped 1% Ce:Gd
2
Y
1
Ga
2.7
Al
2.3
O
12
(GYGAG) single crystal samples grown via Czochralski method were annealed under air, O
2
and N
2
atmospheres from 350 to 1400 °C. The X-ray excited luminescence spectra, energy spectra and UV as well as thermally stimulated luminescence (TSL) spectra were performed comparatively on “as-grown” and thermally annealed samples. It was found that the luminescence efficiency after annealing in air and O
2
was significantly enhanced compared to the non-annealed samples and this phenomenon was suggested to be caused by the existence of some oxygen vacancies in the Ce:GYGAG crystals. And the oxygen vacancies in the as-grown GYGAG crystals can be effectively eliminated by means of annealing in O
2
containing atmosphere without changing the luminescence mechanism. From the TSL curves before and after annealing, three traps within 77–650 K were found to be related to oxygen vacancies. |
| doi_str_mv | 10.1007/s00339-017-0997-z |
| format | Article |
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2
Y
1
Ga
2.7
Al
2.3
O
12
(GYGAG) single crystal samples grown via Czochralski method were annealed under air, O
2
and N
2
atmospheres from 350 to 1400 °C. The X-ray excited luminescence spectra, energy spectra and UV as well as thermally stimulated luminescence (TSL) spectra were performed comparatively on “as-grown” and thermally annealed samples. It was found that the luminescence efficiency after annealing in air and O
2
was significantly enhanced compared to the non-annealed samples and this phenomenon was suggested to be caused by the existence of some oxygen vacancies in the Ce:GYGAG crystals. And the oxygen vacancies in the as-grown GYGAG crystals can be effectively eliminated by means of annealing in O
2
containing atmosphere without changing the luminescence mechanism. From the TSL curves before and after annealing, three traps within 77–650 K were found to be related to oxygen vacancies.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-017-0997-z</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Annealing ; Applied physics ; Cerium ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Crystal growth ; Crystals ; Czochralski method ; Energy spectra ; Excitation spectra ; Lattice vacancies ; Luminescence ; Machines ; Manufacturing ; Materials science ; Nanotechnology ; Optical and Electronic Materials ; Oxygen ; Physics ; Physics and Astronomy ; Processes ; Single crystals ; Surfaces and Interfaces ; Thin Films ; Vacancies</subject><ispartof>Applied physics. A, Materials science & processing, 2017-05, Vol.123 (5), p.1-6, Article 384</ispartof><rights>The Author(s) 2017</rights><rights>Copyright Springer Science & Business Media 2017</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c425t-6a50e9e0968157e3981b7816030bceb40001403a4c91bca607996b10456376be3</citedby><cites>FETCH-LOGICAL-c425t-6a50e9e0968157e3981b7816030bceb40001403a4c91bca607996b10456376be3</cites><orcidid>0000-0002-6057-2532</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-017-0997-z$$EPDF$$P50$$Gspringer$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-017-0997-z$$EHTML$$P50$$Gspringer$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Wang, Chao</creatorcontrib><creatorcontrib>Ding, Dongzhou</creatorcontrib><creatorcontrib>Wu, Yuntao</creatorcontrib><creatorcontrib>Li, Huanying</creatorcontrib><creatorcontrib>Chen, Xiaofeng</creatorcontrib><creatorcontrib>Shi, Jian</creatorcontrib><creatorcontrib>Wang, Qingqing</creatorcontrib><creatorcontrib>Ye, Le</creatorcontrib><creatorcontrib>Ren, Guohao</creatorcontrib><title>Effect of thermal annealing on scintillation properties of Ce:Gd2Y1Ga2.7Al2.3O12 under different atmosphere</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>Cerium-doped 1% Ce:Gd
2
Y
1
Ga
2.7
Al
2.3
O
12
(GYGAG) single crystal samples grown via Czochralski method were annealed under air, O
2
and N
2
atmospheres from 350 to 1400 °C. The X-ray excited luminescence spectra, energy spectra and UV as well as thermally stimulated luminescence (TSL) spectra were performed comparatively on “as-grown” and thermally annealed samples. It was found that the luminescence efficiency after annealing in air and O
2
was significantly enhanced compared to the non-annealed samples and this phenomenon was suggested to be caused by the existence of some oxygen vacancies in the Ce:GYGAG crystals. And the oxygen vacancies in the as-grown GYGAG crystals can be effectively eliminated by means of annealing in O
2
containing atmosphere without changing the luminescence mechanism. From the TSL curves before and after annealing, three traps within 77–650 K were found to be related to oxygen vacancies.</description><subject>Annealing</subject><subject>Applied physics</subject><subject>Cerium</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Crystal growth</subject><subject>Crystals</subject><subject>Czochralski method</subject><subject>Energy spectra</subject><subject>Excitation spectra</subject><subject>Lattice vacancies</subject><subject>Luminescence</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Oxygen</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Single crystals</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><subject>Vacancies</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><recordid>eNp1kL1PwzAQxS0EEuXjD2CLxJxy_ogds1VVKUiVusDAZDnppaSkTrDdgf71uAoDC7ecTnrvd0-PkDsKUwqgHgIA5zoHqnLQWuXHMzKhgrMcJIdzMgEtVF5yLS_JVQg7SCMYm5DPRdNgHbO-yeIH-r3tMusc2q5126x3WahbF9uus7FN1-D7AX1sMZwMc3xcbtg7XVo2VbOOTfmasuzgNuizTZu4Hl3MbNz3YUhsvCEXje0C3v7ua_L2tHidP-er9fJlPlvltWBFzKUtADWCliUtFHJd0kqVVAKHqsZKpOhUALei1rSqrQSltawoiEJyJSvk1-R-5Ka4XwcM0ez6g3fppaGl5lQVjIukoqOq9n0IHhsz-HZv_behYE6dmrFTkzo1p07NMXnY6AlJ67bo_5D_Nf0AFR54FA</recordid><startdate>20170501</startdate><enddate>20170501</enddate><creator>Wang, Chao</creator><creator>Ding, Dongzhou</creator><creator>Wu, Yuntao</creator><creator>Li, Huanying</creator><creator>Chen, Xiaofeng</creator><creator>Shi, Jian</creator><creator>Wang, Qingqing</creator><creator>Ye, Le</creator><creator>Ren, Guohao</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-6057-2532</orcidid></search><sort><creationdate>20170501</creationdate><title>Effect of thermal annealing on scintillation properties of Ce:Gd2Y1Ga2.7Al2.3O12 under different atmosphere</title><author>Wang, Chao ; Ding, Dongzhou ; Wu, Yuntao ; Li, Huanying ; Chen, Xiaofeng ; Shi, Jian ; Wang, Qingqing ; Ye, Le ; Ren, Guohao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c425t-6a50e9e0968157e3981b7816030bceb40001403a4c91bca607996b10456376be3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Annealing</topic><topic>Applied physics</topic><topic>Cerium</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Crystal growth</topic><topic>Crystals</topic><topic>Czochralski method</topic><topic>Energy spectra</topic><topic>Excitation spectra</topic><topic>Lattice vacancies</topic><topic>Luminescence</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Oxygen</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Single crystals</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><topic>Vacancies</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Chao</creatorcontrib><creatorcontrib>Ding, Dongzhou</creatorcontrib><creatorcontrib>Wu, Yuntao</creatorcontrib><creatorcontrib>Li, Huanying</creatorcontrib><creatorcontrib>Chen, Xiaofeng</creatorcontrib><creatorcontrib>Shi, Jian</creatorcontrib><creatorcontrib>Wang, Qingqing</creatorcontrib><creatorcontrib>Ye, Le</creatorcontrib><creatorcontrib>Ren, Guohao</creatorcontrib><collection>Springer Nature OA Free Journals</collection><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Chao</au><au>Ding, Dongzhou</au><au>Wu, Yuntao</au><au>Li, Huanying</au><au>Chen, Xiaofeng</au><au>Shi, Jian</au><au>Wang, Qingqing</au><au>Ye, Le</au><au>Ren, Guohao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of thermal annealing on scintillation properties of Ce:Gd2Y1Ga2.7Al2.3O12 under different atmosphere</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2017-05-01</date><risdate>2017</risdate><volume>123</volume><issue>5</issue><spage>1</spage><epage>6</epage><pages>1-6</pages><artnum>384</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>Cerium-doped 1% Ce:Gd
2
Y
1
Ga
2.7
Al
2.3
O
12
(GYGAG) single crystal samples grown via Czochralski method were annealed under air, O
2
and N
2
atmospheres from 350 to 1400 °C. The X-ray excited luminescence spectra, energy spectra and UV as well as thermally stimulated luminescence (TSL) spectra were performed comparatively on “as-grown” and thermally annealed samples. It was found that the luminescence efficiency after annealing in air and O
2
was significantly enhanced compared to the non-annealed samples and this phenomenon was suggested to be caused by the existence of some oxygen vacancies in the Ce:GYGAG crystals. And the oxygen vacancies in the as-grown GYGAG crystals can be effectively eliminated by means of annealing in O
2
containing atmosphere without changing the luminescence mechanism. From the TSL curves before and after annealing, three traps within 77–650 K were found to be related to oxygen vacancies.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-017-0997-z</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-6057-2532</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Annealing Applied physics Cerium Characterization and Evaluation of Materials Condensed Matter Physics Crystal growth Crystals Czochralski method Energy spectra Excitation spectra Lattice vacancies Luminescence Machines Manufacturing Materials science Nanotechnology Optical and Electronic Materials Oxygen Physics Physics and Astronomy Processes Single crystals Surfaces and Interfaces Thin Films Vacancies |
| title | Effect of thermal annealing on scintillation properties of Ce:Gd2Y1Ga2.7Al2.3O12 under different atmosphere |
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