Effect of thermal annealing on scintillation properties of Ce:Gd2Y1Ga2.7Al2.3O12 under different atmosphere
Cerium-doped 1% Ce:Gd 2 Y 1 Ga 2.7 Al 2.3 O 12 (GYGAG) single crystal samples grown via Czochralski method were annealed under air, O 2 and N 2 atmospheres from 350 to 1400 °C. The X-ray excited luminescence spectra, energy spectra and UV as well as thermally stimulated luminescence (TSL) spectra we...
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Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2017-05, Vol.123 (5), p.1-6, Article 384 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Cerium-doped 1% Ce:Gd
2
Y
1
Ga
2.7
Al
2.3
O
12
(GYGAG) single crystal samples grown via Czochralski method were annealed under air, O
2
and N
2
atmospheres from 350 to 1400 °C. The X-ray excited luminescence spectra, energy spectra and UV as well as thermally stimulated luminescence (TSL) spectra were performed comparatively on “as-grown” and thermally annealed samples. It was found that the luminescence efficiency after annealing in air and O
2
was significantly enhanced compared to the non-annealed samples and this phenomenon was suggested to be caused by the existence of some oxygen vacancies in the Ce:GYGAG crystals. And the oxygen vacancies in the as-grown GYGAG crystals can be effectively eliminated by means of annealing in O
2
containing atmosphere without changing the luminescence mechanism. From the TSL curves before and after annealing, three traps within 77–650 K were found to be related to oxygen vacancies. |
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ISSN: | 0947-8396 1432-0630 |
DOI: | 10.1007/s00339-017-0997-z |