Direct Observation of Dual‐Filament Switching Behaviors in Ta2O5‐Based Memristors

Direct Observation of Dual‐Filament Switching Behaviors in Ta2O5‐Based Memristors

The Forming phenomenon is observed via in situ transmission electron microscopy in the Ag/Ta2O5/Pt system. The device is switched to a low‐resistance state as the dual filament is connected to the electrodes. The results of energy dispersive spectrometer and electron energy loss spectroscopy analyse...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2017-04, Vol.13 (15), p.n/a
Hauptverfasser: Chang, Chia‐Fu, Chen, Jui‐Yuan, Huang, Chun‐Wei, Chiu, Chung‐Hua, Lin, Ting‐Yi, Yeh, Ping‐Hung, Wu, Wen‐Wei
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dual filaments
Electrons
hydroxide
in situ TEM
memristors
Nanotechnology
RRAM
Ta2O5
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container_issue 15
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container_title Small (Weinheim an der Bergstrasse, Germany)
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creator Chang, Chia‐Fu
Chen, Jui‐Yuan
Huang, Chun‐Wei
Chiu, Chung‐Hua
Lin, Ting‐Yi
Yeh, Ping‐Hung
Wu, Wen‐Wei
description The Forming phenomenon is observed via in situ transmission electron microscopy in the Ag/Ta2O5/Pt system. The device is switched to a low‐resistance state as the dual filament is connected to the electrodes. The results of energy dispersive spectrometer and electron energy loss spectroscopy analyses demonstrate that the filament is composed by a stack of oxygen vacancies and Ag metal.
doi_str_mv 10.1002/smll.201603116
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source Wiley Online Library Journals Frontfile Complete
subjects dual filaments
Electrons
hydroxide
in situ TEM
memristors
Nanotechnology
RRAM
Ta2O5
title Direct Observation of Dual‐Filament Switching Behaviors in Ta2O5‐Based Memristors
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