Direct Observation of Dual‐Filament Switching Behaviors in Ta2O5‐Based Memristors

Direct Observation of Dual‐Filament Switching Behaviors in Ta2O5‐Based Memristors

The Forming phenomenon is observed via in situ transmission electron microscopy in the Ag/Ta2O5/Pt system. The device is switched to a low‐resistance state as the dual filament is connected to the electrodes. The results of energy dispersive spectrometer and electron energy loss spectroscopy analyse...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2017-04, Vol.13 (15), p.n/a
Hauptverfasser: Chang, Chia‐Fu, Chen, Jui‐Yuan, Huang, Chun‐Wei, Chiu, Chung‐Hua, Lin, Ting‐Yi, Yeh, Ping‐Hung, Wu, Wen‐Wei
Format: Artikel
Sprache:eng
Schlagworte:
dual filaments
Electrons
hydroxide
in situ TEM
memristors
Nanotechnology
RRAM
Ta2O5
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Zusammenfassung:The Forming phenomenon is observed via in situ transmission electron microscopy in the Ag/Ta2O5/Pt system. The device is switched to a low‐resistance state as the dual filament is connected to the electrodes. The results of energy dispersive spectrometer and electron energy loss spectroscopy analyses demonstrate that the filament is composed by a stack of oxygen vacancies and Ag metal.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201603116