Automated numerical characterization of dilute semiconductors per comparison with luminescence

Automated numerical characterization of dilute semiconductors per comparison with luminescence

This paper combines analytical approximations for the optical absorption and luminescence of semiconductors with trust region-reflective methods, delivering a robust numerical characterization method to be used in the study of new bulk semiconductors per direct comparison with experimental spectra....

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Veröffentlicht in:Optical and quantum electronics 2017-03, Vol.49 (3), p.1-8, Article 93
Hauptverfasser: Yang, X., Oriaku, C. I., Zubelli, J. P., Pereira, M. F.
Format: Artikel
Sprache:eng
Schlagworte:
Characterization and Evaluation of Materials
Computer Communication Networks
Detection and Applications (SMMO 2016)
Dilution
Electrical Engineering
Generation
Lasers
Luminescence
Numerical methods
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Robustness (mathematics)
Semiconductors
TERA-MIR Radiation: Materials
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Beschreibung
Zusammenfassung:This paper combines analytical approximations for the optical absorption and luminescence of semiconductors with trust region-reflective methods, delivering a robust numerical characterization method to be used in the study of new bulk semiconductors per direct comparison with experimental spectra. It further extends recent applications of the theory to the case of dilute nitride semiconductors and confirms results for the s-shape of the luminescence peak as a function of temperature.
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-017-0919-5