Negative reflection in GaP single crystals

An experimental work focused on measurement of reflection coefficient of GaP single crystal specimens in the exciton resonance region is described. Occurrence of negative reflection in the specimen with a thickness of 100 μm and initial concentration of charge carriers of 10 15 cm −3 over a wavelen...

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Veröffentlicht in:	Optical and quantum electronics 2016-10, Vol.48 (10), p.1-6, Article 452
Hauptverfasser:	Figarova, S. R., Figarov, V. R., Rashidova, Sh. Sh
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Computer Communication Networks Current carriers Electrical Engineering Excitons Lasers Optical Devices Optics Photonics Physics Physics and Astronomy Radiation dosage Reflectance Single crystals Thickness measurement
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Zusammenfassung:	An experimental work focused on measurement of reflection coefficient of GaP single crystal specimens in the exciton resonance region is described. Occurrence of negative reflection in the specimen with a thickness of 100 μm and initial concentration of charge carriers of 10 15 cm −3 over a wavelength interval spanning from 0.54 to 0.81 μm (from 1.52 to 2.30 eV) has been detected. Irradiation of the specimen by fast electrons with a dose of 10 16 e/cm 2 enhances negative reflection. Negative reflection is attributed to the formation of surface excitons with negative effective mass.
ISSN:	0306-8919 1572-817X
DOI:	10.1007/s11082-016-0722-8