The effect of size of the SiC inclusions in the AlN–SiC composite structure on its electrophysical properties

AlN–SiC–Y 3 Al 5 O 12 composite materials with a high absorption of microwave frequency (27–65 dB/cm) produced by pressureless sintering of mixtures consisting of AlN(2H), Y 2 O 3 , and SiC (6H) in 46, 4, 50 wt %, respectively, have been studied. The SiC components of the mixtures were used in sizes of 1, 5, and 50 μm. It has been shown that the resistivity of the developed materials depends essentially on the materials structures: sizes of SiC inclusions, distances between them, and state of the interfaces. It has been found that the increase of the SiC inclusions sizes in the material structure from 3 to 7 μm results in the decrease of the resistivity from 10 4 to 90 Ω·m, and at the decrease of the SiC inclusions sizes from 3 to 0.5 μm there forms a SiC uninterrupted skeleton, which also decreases the resistivity to 210 Ω·m. Thus, composite materials that contain 50 wt % SiC (inclusions sizes of 3 μm) are the most efficient in producing absorbers of microwave radiation. Interlayers of yttrium aluminum garnet, which are located at the SiC grains boundaries, prevent the forming of AlN(2H)–SiC(6H) solid solutions and thus, make it possible to keep high dielectric characteristics of a composite material based on aluminum nitride and afford a high absorption of a microwave radiation.