Controllable growth of vertically aligned Bi-doped TiO2 nanorod arrays for all-oxide solid-state DSSCs

In this study, vertically aligned Bi-doped TiO 2 nanorod arrays as photoanodes were successfully grown on the fluorine-doped tin oxide by hydrothermal method. Structural analysis showed that bismuth was successfully incorporated into the TiO 2 lattice at low concentration, but at higher concentratio...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2016-09, Vol.122 (9), p.1-11, Article 853
Hauptverfasser: Asemi, Morteza, Ghanaatshoar, Majid
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this study, vertically aligned Bi-doped TiO 2 nanorod arrays as photoanodes were successfully grown on the fluorine-doped tin oxide by hydrothermal method. Structural analysis showed that bismuth was successfully incorporated into the TiO 2 lattice at low concentration, but at higher concentration, phase segregation of Bi 2 O 3 in the TiO 2 matrix was occurred. TiO 2 nanorods with 3 % bismuth concentration had minimum electrical resistivity. As the solid-state electrolyte, Mg-doped CuCrO 2 nanoparticles with p -type conductivity were synthesized by sol–gel method. The fabricated all-oxide solid-state dye-sensitized solar cells with Bi-doped TiO 2 nanorods displayed better photovoltaic performance due to the presence of Bi. The improved cell performance was correlated with the higher dye loading, slower charge recombination rate and the higher electrical conductivity of the photoanodes. After mechanical pressing, the all-oxide solid-state DSSC exhibited enhanced photovoltaic performance due to the formation of the large neck between adjacent nanoparticles by mechanical sintering. The open-circuit photovoltage decay measurement of the devices and electrical conductivity of the nanoparticles before and after pressing revealed that the mechanical pressing technique reduces charge recombination rate and facilitates electron transport through the interconnected nanoparticles.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-016-0389-9