Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures
Photovoltaic laser-power converters for a wavelength of λ = 809 nm are developed and fabricated on the basis of single-junction AlGaAs/GaAs structures grown by metal-organic vapor-phase epitaxy. The parameters of the photovoltaic structure constituted by an optical “window” and a cladding layer are...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2016-09, Vol.50 (9), p.1220-1224 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Photovoltaic laser-power converters for a wavelength of λ = 809 nm are developed and fabricated on the basis of single-junction AlGaAs/GaAs structures grown by metal-organic vapor-phase epitaxy. The parameters of the photovoltaic structure constituted by an optical “window” and a cladding layer are optimized by mathematical simulation. Photovoltaic converters with areas of
S
= 10.2 and 12.2 mm
2
and 4 cm
2
are fabricated and studied. For photocells with S = 10.2 mm
2
, the monochromatic efficiency (η) was 60% at a current density of 5.9 A/cm
2
. A photovoltaic module with a working voltage of 4 V (η = 56.3% at 0.34 A/cm
2
) is assembled. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782616090128 |