Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures

Photovoltaic laser-power converters for a wavelength of λ = 809 nm are developed and fabricated on the basis of single-junction AlGaAs/GaAs structures grown by metal-organic vapor-phase epitaxy. The parameters of the photovoltaic structure constituted by an optical “window” and a cladding layer are...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016-09, Vol.50 (9), p.1220-1224
Hauptverfasser: Khvostikov, V. P., Kalyuzhnyy, N. A., Mintairov, S. A., Sorokina, S. V., Potapovich, N. S., Emelyanov, V. M., Timoshina, N. Kh, Andreev, V. M.
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Sprache:eng
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Zusammenfassung:Photovoltaic laser-power converters for a wavelength of λ = 809 nm are developed and fabricated on the basis of single-junction AlGaAs/GaAs structures grown by metal-organic vapor-phase epitaxy. The parameters of the photovoltaic structure constituted by an optical “window” and a cladding layer are optimized by mathematical simulation. Photovoltaic converters with areas of S = 10.2 and 12.2 mm 2 and 4 cm 2 are fabricated and studied. For photocells with S = 10.2 mm 2 , the monochromatic efficiency (η) was 60% at a current density of 5.9 A/cm 2 . A photovoltaic module with a working voltage of 4 V (η = 56.3% at 0.34 A/cm 2 ) is assembled.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616090128