A silicon field-effect hall sensor with an extended operating temperature range

The characteristics of thin-film Si MISIM magnetic transistors with a built-in accumulated channel and partially depleted quasi-neutral area are studied. The design of transistors is integrated with a Hall element. It is shown experimentally that transistors of this type, which were named field-effe...

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Veröffentlicht in:	Instruments and experimental techniques (New York) 2016-09, Vol.59 (5), p.724-727
Hauptverfasser:	Leonov, A. V., Malykh, A. A., Mordkovich, V. N., Pavlyuk, M. I.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electrical Engineering General Experimental Techniques Hall effect Magnetic induction Measurement Science and Instrumentation Operating temperature Physical Chemistry Physics Physics and Astronomy Semiconductor devices Silicon SOI (semiconductors) Transistors
Online-Zugang:	Volltext
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