A silicon field-effect hall sensor with an extended operating temperature range
The characteristics of thin-film Si MISIM magnetic transistors with a built-in accumulated channel and partially depleted quasi-neutral area are studied. The design of transistors is integrated with a Hall element. It is shown experimentally that transistors of this type, which were named field-effe...
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| Veröffentlicht in: | Instruments and experimental techniques (New York) 2016-09, Vol.59 (5), p.724-727 |
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| container_title | Instruments and experimental techniques (New York) |
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| creator | Leonov, A. V. Malykh, A. A. Mordkovich, V. N. Pavlyuk, M. I. |
| description | The characteristics of thin-film Si MISIM magnetic transistors with a built-in accumulated channel and partially depleted quasi-neutral area are studied. The design of transistors is integrated with a Hall element. It is shown experimentally that transistors of this type, which were named field-effect Hall sensors (FEHSs) and made by the “silicon-on-insulator” (SOI) technology, provide measurements of the magnetic induction in a temperature range of 1.7–605 K. Theoretical estimates show that the upper operating temperature limit of the FEHS can be about 850 K. |
| doi_str_mv | 10.1134/S0020441216050109 |
| format | Article |
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Theoretical estimates show that the upper operating temperature limit of the FEHS can be about 850 K.</description><subject>Electrical Engineering</subject><subject>General Experimental Techniques</subject><subject>Hall effect</subject><subject>Magnetic induction</subject><subject>Measurement Science and Instrumentation</subject><subject>Operating temperature</subject><subject>Physical Chemistry</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Semiconductor devices</subject><subject>Silicon</subject><subject>SOI (semiconductors)</subject><subject>Transistors</subject><issn>0020-4412</issn><issn>1608-3180</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp1UE1LAzEQDaJgrf4AbwHPq5OPzWaPpagVCj2o5yXdTNot22xNUtR_b2o9COJpHryPmXmEXDO4ZUzIu2cADlIyzhSUwKA-IaMMdSGYhlMyOtDFgT8nFzFuAKCuqmpEFhMau75rB09dh70t0DlsE12bvqcRfRwCfe_SmhpP8SOht2jpsMNgUudXNOH2G-8D0mD8Ci_JmTN9xKufOSavD_cv01kxXzw-TSfzohVMpUJxtBJR5bMsmqUrayaFkVYpabUUEktT5zdQV1pyhw7q0lgOgsslb1XVijG5OebuwvC2x5iazbAPPq9smNagFatBZhU7qtowxBjQNbvQbU34bBg0h96aP71lDz96Ytbmj8Kv5H9NX8gZbjo</recordid><startdate>20160901</startdate><enddate>20160901</enddate><creator>Leonov, A. 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| subjects | Electrical Engineering General Experimental Techniques Hall effect Magnetic induction Measurement Science and Instrumentation Operating temperature Physical Chemistry Physics Physics and Astronomy Semiconductor devices Silicon SOI (semiconductors) Transistors |
| title | A silicon field-effect hall sensor with an extended operating temperature range |
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