Quantum efficiency of 4H-SiC detectors within the range of 114–400 nm

Quantum efficiency of 4H-SiC detectors within the range of 114–400 nm

Electrical and spectrometric characteristics of 4 H -SiC detectors with Cr Schottky barriers in the spectral ranges of 114–175 and 210–400 nm are studied. It is demonstrated that the quality of commercially available 4 H -SiC layers is sufficient to construct UV radiation detectors with their extern...

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Veröffentlicht in:Technical physics letters 2016-10, Vol.42 (10), p.1057-1059
Hauptverfasser: Kalinina, E. V., Violina, G. N., Belik, V. P., Nikolaev, A. V., Zabrodskii, V. V.
Format: Artikel
Sprache:eng
Schlagworte:
Classical and Continuum Physics
Physics
Physics and Astronomy
Silicon carbide
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Zusammenfassung:Electrical and spectrometric characteristics of 4 H -SiC detectors with Cr Schottky barriers in the spectral ranges of 114–175 and 210–400 nm are studied. It is demonstrated that the quality of commercially available 4 H -SiC layers is sufficient to construct UV radiation detectors with their external quantum efficiency exceeding 20% in the studied spectral ranges.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785016100229