Low-temperature contribution to the resonant tunneling conductance of a disordered N–I–N junction

A formula for the contribution Δ G res ( T ) to the resonant tunneling conductance of the N–I–N junction (where N is a normal metal and I is an insulator) with a weak (low impurity concentrations) structural disorder in the I layer from the low-temperature “smearing” electron Fermi surfaces in its N shores is obtained. It is shown that the temperature dependence Δ G res ( T ) in such a “dirty” junction qualitatively differs from the corresponding dependence Δ G 0 ( T ) in a “pure” (without resonant impurities in the I layer) junction: Δ G res ( T ) < 0, d (Δ G res )/ dT < 0; Δ G 0 ( T ) > 0, d (Δ G 0 )/ dT > 0, which can serve as an experimental test of the presence of impurity tunneling resonances in the disordered I layer.